Comparison of Pt/GaN and Pt/4H-SiC gas sensors

Jihyun Kim, B. P. Gila, C. R. Abernathy, G. Y. Chung, F. Ren, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)


The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode rectifiers show rapid (<1 s) changes in forward current upon introduction of different gases (N2, air, H2, CF4) into the ambient. The diodes can be operated at large forward currents, leading to large signal sizes for switching from one gas ambient to another. For GaN, a shift of ∼0.2 V at 25 °C and ∼0.7 V at 150 °C was obtained at a fixed forward current for switching from N2 to 10% H2 in N2. For SiC, under similar conditions, shift of 1.34 V at 25 °C was obtained at a fixed forward current of 0.2 A for switching from N2 to 10% H2 in N2. The signal size increases with increasing measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.

Original languageEnglish
Pages (from-to)1487-1490
Number of pages4
JournalSolid-State Electronics
Issue number9
Publication statusPublished - 2003 Sept
Externally publishedYes

Bibliographical note

Funding Information:
The work at UF was partially supported by NSF (CTS 991173) and NASA (NAG10-316) monitored by Dr. William Knott.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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