Comparison of stability of WSi x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

Jihyun Kim; F. Ren; G. Y. Chung; M. F. MacMillan; A. G. Baca; R. D. Briggs; D. Schoenfeld; S. J. Pearton

doi:10.1063/1.1642271

Comparison of stability of WSi _x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

Jihyun Kim, F. Ren, G. Y. Chung, M. F. MacMillan, A. G. Baca, R. D. Briggs, D. Schoenfeld, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

A comparison of the performance of WSi _x rectifiers with Ni/SiC Schottky rectifiers to high dose γ-ray irradiation was discussed. SiC Schottky rectifiers with moderate breakdown voltages of ∼450 V and with either WSi _x or Ni rectifying contacts were irradiated with Co-60 γ-rays. It was found that high dose γ-ray irradiation of N/SiC schottky rectifiers show significant degradation of the forward current characteristics, due to instability of the contacts. The results show that the WSi _x/SiC rectifiers show little deterioration of the contact with the same conditions.

Original language	English
Pages (from-to)	371-373
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	3
DOIs	https://doi.org/10.1063/1.1642271
Publication status	Published - 2004 Jan 19
Externally published	Yes

Bibliographical note

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1642271

Cite this

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title = "Comparison of stability of WSi x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation",

abstract = "A comparison of the performance of WSi x rectifiers with Ni/SiC Schottky rectifiers to high dose γ-ray irradiation was discussed. SiC Schottky rectifiers with moderate breakdown voltages of ∼450 V and with either WSi x or Ni rectifying contacts were irradiated with Co-60 γ-rays. It was found that high dose γ-ray irradiation of N/SiC schottky rectifiers show significant degradation of the forward current characteristics, due to instability of the contacts. The results show that the WSi x/SiC rectifiers show little deterioration of the contact with the same conditions.",

author = "Jihyun Kim and F. Ren and Chung, {G. Y.} and MacMillan, {M. F.} and Baca, {A. G.} and Briggs, {R. D.} and D. Schoenfeld and Pearton, {S. J.}",

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T1 - Comparison of stability of WSi x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation

AU - Kim, Jihyun

AU - Ren, F.

AU - Chung, G. Y.

AU - MacMillan, M. F.

AU - Baca, A. G.

AU - Briggs, R. D.

AU - Schoenfeld, D.

AU - Pearton, S. J.

PY - 2004/1/19

Y1 - 2004/1/19

N2 - A comparison of the performance of WSi x rectifiers with Ni/SiC Schottky rectifiers to high dose γ-ray irradiation was discussed. SiC Schottky rectifiers with moderate breakdown voltages of ∼450 V and with either WSi x or Ni rectifying contacts were irradiated with Co-60 γ-rays. It was found that high dose γ-ray irradiation of N/SiC schottky rectifiers show significant degradation of the forward current characteristics, due to instability of the contacts. The results show that the WSi x/SiC rectifiers show little deterioration of the contact with the same conditions.

AB - A comparison of the performance of WSi x rectifiers with Ni/SiC Schottky rectifiers to high dose γ-ray irradiation was discussed. SiC Schottky rectifiers with moderate breakdown voltages of ∼450 V and with either WSi x or Ni rectifying contacts were irradiated with Co-60 γ-rays. It was found that high dose γ-ray irradiation of N/SiC schottky rectifiers show significant degradation of the forward current characteristics, due to instability of the contacts. The results show that the WSi x/SiC rectifiers show little deterioration of the contact with the same conditions.

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