Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

B. Luo; R. Mehandru; J. Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; R. Fitch; J. Gillespie; T. Jenkins; J. Sewell; D. Via; A. Crespo; Y. Irokawa

doi:10.1149/1.1512675

Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

B. Luo, R. Mehandru, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton^*, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

Three different passivation layers (SiN_X, MgO, and Sc₂O₃) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiN_X produced ∼70-75% recovery of the drain-source current, independent of whether SIH₄/NH₃ or SiD₄/ND₃ plasma chemistries were employed. Both the Sc₂O₃ and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc₂O₃ had superior long-term stability, with no change in HEMT behavior over 5 months aging.

Original language	English
Pages (from-to)	G613-G619
Journal	Journal of the Electrochemical Society
Volume	149
Issue number	11
DOIs	https://doi.org/10.1149/1.1512675
Publication status	Published - 2002 Nov
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

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Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A., & Irokawa, Y. (2002). Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors. Journal of the Electrochemical Society, 149(11), G613-G619. https://doi.org/10.1149/1.1512675

Luo, B, Mehandru, R, Kim, J, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Fitch, R, Gillespie, J, Jenkins, T, Sewell, J, Via, D, Crespo, A & Irokawa, Y 2002, 'Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors', Journal of the Electrochemical Society, vol. 149, no. 11, pp. G613-G619. https://doi.org/10.1149/1.1512675

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title = "Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors",

abstract = "Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75\% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90\% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.",

author = "B. Luo and R. Mehandru and J. Kim and F. Ren and Gila, \{B. P.\} and Onstine, \{A. H.\} and Abernathy, \{C. R.\} and Pearton, \{S. J.\} and R. Fitch and J. Gillespie and T. Jenkins and J. Sewell and D. Via and A. Crespo and Y. Irokawa",

year = "2002",

month = nov,

doi = "10.1149/1.1512675",

language = "English",

volume = "149",

pages = "G613--G619",

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T1 - Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

AU - Luo, B.

AU - Mehandru, R.

AU - Kim, J.

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Fitch, R.

AU - Gillespie, J.

AU - Jenkins, T.

AU - Sewell, J.

AU - Via, D.

AU - Crespo, A.

AU - Irokawa, Y.

PY - 2002/11

Y1 - 2002/11

N2 - Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.

AB - Three different passivation layers (SiNX, MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). The plasma-enhanced vapor deposited SiNX produced ∼70-75% recovery of the drain-source current, independent of whether SIH4/NH3 or SiD4/ND3 plasma chemistries were employed. Both the Sc2O3 and MgO produced essentially complete recovery of the current in GaN-cap HEMT structures and ∼80-90% recovery in AlGaN-cap structures. The Sc2O3 had superior long-term stability, with no change in HEMT behavior over 5 months aging.

UR - https://www.scopus.com/pages/publications/0036864577

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DO - 10.1149/1.1512675

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SN - 0013-4651

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 11

ER -

Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors

Abstract

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