Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; Jihyun Kim; F. Ren; G. T. Thaler; M. E. Overberg; R. Frazier; C. R. Abernathy; S. J. Pearton; C. M. Lee; J. I. Chyi; R. G. Wilson; J. M. Zavada

doi:10.1016/S0038-1101(02)00472-0

Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Jihyun Kim, F. Ren, G. T. Thaler, M. E. Overberg, R. Frazier, C. R. Abernathy, S. J. Pearton, C. M. Lee, J. I. Chyi, R. G. Wilson, J. M. Zavada

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Electrical and luminescent properties of normal p-side-up and inverted n-side-up light emitting diodes (p-LEDs and n-LEDs) and the effect of Mn incorporation into the upper n-type contact layer structure of GaN-based multiquantum-well MQW LEDs were studied. The latter structure is considered as promising for spintronic applications (spin-LED). It is shown that n-LEDs have more pronounced tunneling compared to p-LEDs and that the active region of the n-LEDs shows domain-like nonuniformities that are absent in p-LEDs. These nonuniformities seem to be related to local segregation of In in the GaN/InGaN MQWs and result in the emergency of double peaked electroluminescence (EL) spectra in n-LEDs. Introduction of Mn leads to strong increase of the resistivity of the GaMnN layer which gives rise to increased threshold voltage for observing the EL and decreased EL intensity.

Original language	English
Pages (from-to)	981-987
Number of pages	7
Journal	Solid-State Electronics
Volume	47
Issue number	6
DOIs	https://doi.org/10.1016/S0038-1101(02)00472-0
Publication status	Published - 2003 Jun
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (RFBR Grant # 01-02-17230). The work at UF is partially supported by NSF(CTS 991173, DMR 0101438) and ARO. The work at NCU was supported by the National Science Council of Republic of China under contract no. NSC 90-2215-E-008-038 and by the Ministry of Education of Republic of China under the Program for Promoting Academic Excellence of Universities, contract no. 91-E-FA06-1-4.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(02)00472-0

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Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kim, J., Ren, F., Thaler, G. T., Overberg, M. E., Frazier, R., Abernathy, C. R., Pearton, S. J., Lee, C. M., Chyi, J. I., Wilson, R. G., & Zavada, J. M. (2003). Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer. Solid-State Electronics, 47(6), 981-987. https://doi.org/10.1016/S0038-1101(02)00472-0

Polyakov, AY, Smirnov, NB, Govorkov, AV, Kim, J, Ren, F, Thaler, GT, Overberg, ME, Frazier, R, Abernathy, CR, Pearton, SJ, Lee, CM, Chyi, JI, Wilson, RG & Zavada, JM 2003, 'Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer', Solid-State Electronics, vol. 47, no. 6, pp. 981-987. https://doi.org/10.1016/S0038-1101(02)00472-0

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title = "Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer",

abstract = "Electrical and luminescent properties of normal p-side-up and inverted n-side-up light emitting diodes (p-LEDs and n-LEDs) and the effect of Mn incorporation into the upper n-type contact layer structure of GaN-based multiquantum-well MQW LEDs were studied. The latter structure is considered as promising for spintronic applications (spin-LED). It is shown that n-LEDs have more pronounced tunneling compared to p-LEDs and that the active region of the n-LEDs shows domain-like nonuniformities that are absent in p-LEDs. These nonuniformities seem to be related to local segregation of In in the GaN/InGaN MQWs and result in the emergency of double peaked electroluminescence (EL) spectra in n-LEDs. Introduction of Mn leads to strong increase of the resistivity of the GaMnN layer which gives rise to increased threshold voltage for observing the EL and decreased EL intensity.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Jihyun Kim and F. Ren and Thaler, {G. T.} and Overberg, {M. E.} and R. Frazier and Abernathy, {C. R.} and Pearton, {S. J.} and Lee, {C. M.} and Chyi, {J. I.} and Wilson, {R. G.} and Zavada, {J. M.}",

note = "Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (RFBR Grant # 01-02-17230). The work at UF is partially supported by NSF(CTS 991173, DMR 0101438) and ARO. The work at NCU was supported by the National Science Council of Republic of China under contract no. NSC 90-2215-E-008-038 and by the Ministry of Education of Republic of China under the Program for Promoting Academic Excellence of Universities, contract no. 91-E-FA06-1-4.",

year = "2003",

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AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kim, Jihyun

AU - Ren, F.

AU - Thaler, G. T.

AU - Overberg, M. E.

AU - Frazier, R.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Lee, C. M.

AU - Chyi, J. I.

AU - Wilson, R. G.

AU - Zavada, J. M.

N1 - Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (RFBR Grant # 01-02-17230). The work at UF is partially supported by NSF(CTS 991173, DMR 0101438) and ARO. The work at NCU was supported by the National Science Council of Republic of China under contract no. NSC 90-2215-E-008-038 and by the Ministry of Education of Republic of China under the Program for Promoting Academic Excellence of Universities, contract no. 91-E-FA06-1-4.

PY - 2003/6

Y1 - 2003/6

N2 - Electrical and luminescent properties of normal p-side-up and inverted n-side-up light emitting diodes (p-LEDs and n-LEDs) and the effect of Mn incorporation into the upper n-type contact layer structure of GaN-based multiquantum-well MQW LEDs were studied. The latter structure is considered as promising for spintronic applications (spin-LED). It is shown that n-LEDs have more pronounced tunneling compared to p-LEDs and that the active region of the n-LEDs shows domain-like nonuniformities that are absent in p-LEDs. These nonuniformities seem to be related to local segregation of In in the GaN/InGaN MQWs and result in the emergency of double peaked electroluminescence (EL) spectra in n-LEDs. Introduction of Mn leads to strong increase of the resistivity of the GaMnN layer which gives rise to increased threshold voltage for observing the EL and decreased EL intensity.

AB - Electrical and luminescent properties of normal p-side-up and inverted n-side-up light emitting diodes (p-LEDs and n-LEDs) and the effect of Mn incorporation into the upper n-type contact layer structure of GaN-based multiquantum-well MQW LEDs were studied. The latter structure is considered as promising for spintronic applications (spin-LED). It is shown that n-LEDs have more pronounced tunneling compared to p-LEDs and that the active region of the n-LEDs shows domain-like nonuniformities that are absent in p-LEDs. These nonuniformities seem to be related to local segregation of In in the GaN/InGaN MQWs and result in the emergency of double peaked electroluminescence (EL) spectra in n-LEDs. Introduction of Mn leads to strong increase of the resistivity of the GaMnN layer which gives rise to increased threshold voltage for observing the EL and decreased EL intensity.

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Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer

Abstract

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