Abstract
An investigation of lattice mismatched p-InGaP and p-AlInGaP diodes and solar cell structures has been carried out after irradiation with 1MeV electron and subsequently after annealing. The overall spectra of the hole traps both in InGaP and AlInGaP, observed by deep level transient spectroscopy (DLTS), is slightly different. However, electron spectra are significantly different in both types of samples. Apparent correlations between the recoveries of short-circuit current and quantum efficiency, and the annealing of the H1, H2, and H3 defects is observed both in AlInGaP and InGaP. Capacitance-voltage (C-V) profile results imply that other trap levels, which were not observed by DLTS must play a more important role in the carrier removal process.
| Original language | English |
|---|---|
| Pages (from-to) | 663-666 |
| Number of pages | 4 |
| Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Publication status | Published - 2005 |
| Externally published | Yes |
| Event | 31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 2005 Jan 3 → 2005 Jan 7 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering