Comparison of thermal annealing behavior of radiation induced defects in lattice mismatched InGaP and AIInGaP solar cells structures

Aurangzeb Khan; S. Marupaduga; M. Alam; N. J. Ekins-Daukes; H. S. Lee; T. Sasaki; M. Yamaguchi

Comparison of thermal annealing behavior of radiation induced defects in lattice mismatched InGaP and AIInGaP solar cells structures

Aurangzeb Khan, S. Marupaduga, M. Alam, N. J. Ekins-Daukes, H. S. Lee, T. Sasaki, M. Yamaguchi

Research output: Contribution to journal › Conference article › peer-review

Abstract

An investigation of lattice mismatched p-InGaP and p-AlInGaP diodes and solar cell structures has been carried out after irradiation with 1MeV electron and subsequently after annealing. The overall spectra of the hole traps both in InGaP and AlInGaP, observed by deep level transient spectroscopy (DLTS), is slightly different. However, electron spectra are significantly different in both types of samples. Apparent correlations between the recoveries of short-circuit current and quantum efficiency, and the annealing of the H1, H2, and H3 defects is observed both in AlInGaP and InGaP. Capacitance-voltage (C-V) profile results imply that other trap levels, which were not observed by DLTS must play a more important role in the carrier removal process.

Original language	English
Pages (from-to)	663-666
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Publication status	Published - 2005
Externally published	Yes
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 2005 Jan 3 → 2005 Jan 7

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

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title = "Comparison of thermal annealing behavior of radiation induced defects in lattice mismatched InGaP and AIInGaP solar cells structures",

abstract = "An investigation of lattice mismatched p-InGaP and p-AlInGaP diodes and solar cell structures has been carried out after irradiation with 1MeV electron and subsequently after annealing. The overall spectra of the hole traps both in InGaP and AlInGaP, observed by deep level transient spectroscopy (DLTS), is slightly different. However, electron spectra are significantly different in both types of samples. Apparent correlations between the recoveries of short-circuit current and quantum efficiency, and the annealing of the H1, H2, and H3 defects is observed both in AlInGaP and InGaP. Capacitance-voltage (C-V) profile results imply that other trap levels, which were not observed by DLTS must play a more important role in the carrier removal process.",

author = "Aurangzeb Khan and S. Marupaduga and M. Alam and Ekins-Daukes, {N. J.} and Lee, {H. S.} and T. Sasaki and M. Yamaguchi",

year = "2005",

language = "English",

pages = "663--666",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

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TY - JOUR

T1 - Comparison of thermal annealing behavior of radiation induced defects in lattice mismatched InGaP and AIInGaP solar cells structures

AU - Khan, Aurangzeb

AU - Marupaduga, S.

AU - Alam, M.

AU - Ekins-Daukes, N. J.

AU - Lee, H. S.

AU - Sasaki, T.

AU - Yamaguchi, M.

PY - 2005

Y1 - 2005

N2 - An investigation of lattice mismatched p-InGaP and p-AlInGaP diodes and solar cell structures has been carried out after irradiation with 1MeV electron and subsequently after annealing. The overall spectra of the hole traps both in InGaP and AlInGaP, observed by deep level transient spectroscopy (DLTS), is slightly different. However, electron spectra are significantly different in both types of samples. Apparent correlations between the recoveries of short-circuit current and quantum efficiency, and the annealing of the H1, H2, and H3 defects is observed both in AlInGaP and InGaP. Capacitance-voltage (C-V) profile results imply that other trap levels, which were not observed by DLTS must play a more important role in the carrier removal process.

AB - An investigation of lattice mismatched p-InGaP and p-AlInGaP diodes and solar cell structures has been carried out after irradiation with 1MeV electron and subsequently after annealing. The overall spectra of the hole traps both in InGaP and AlInGaP, observed by deep level transient spectroscopy (DLTS), is slightly different. However, electron spectra are significantly different in both types of samples. Apparent correlations between the recoveries of short-circuit current and quantum efficiency, and the annealing of the H1, H2, and H3 defects is observed both in AlInGaP and InGaP. Capacitance-voltage (C-V) profile results imply that other trap levels, which were not observed by DLTS must play a more important role in the carrier removal process.

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M3 - Conference article

AN - SCOPUS:27944473342

SN - 0160-8371

SP - 663

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JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Comparison of thermal annealing behavior of radiation induced defects in lattice mismatched InGaP and AIInGaP solar cells structures

Abstract

ASJC Scopus subject areas

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