Abstract
We grew CdTexSe1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS' X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTexSe1-x crystals. We noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks.
Original language | English |
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Pages (from-to) | 34-37 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 411 |
DOIs | |
Publication status | Published - 2015 Feb 1 |
Keywords
- A1. Characterization
- A1. Defects
- A1. Te-inclusions
- A1.Subgrain boundary
- B2. CdTeSe
- B2. Semiconducting II-VI materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry