Compositional homogeneity and X-ray topographic analyses of CdTexSe1-x grown by the vertical Bridgman technique

U. N. Roy; A. E. Bolotnikov; G. S. Camarda; Y. Cui; A. Hossain; K. Lee; W. Lee; R. Tappero; Ge Yang; Y. Cui; A. Burger; R. B. James

doi:10.1016/j.jcrysgro.2014.10.057

Compositional homogeneity and X-ray topographic analyses of CdTe_xSe_1-x grown by the vertical Bridgman technique

U. N. Roy, A. E. Bolotnikov, G. S. Camarda, Y. Cui, A. Hossain, K. Lee, W. Lee, R. Tappero, Ge Yang, Y. Cui, A. Burger, R. B. James

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We grew CdTe_xSe_1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS' X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTe_xSe_1-x crystals. We noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks.

Original language	English
Pages (from-to)	34-37
Number of pages	4
Journal	Journal of Crystal Growth
Volume	411
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.10.057
Publication status	Published - 2015 Feb 1

Bibliographical note

Funding Information:
The authors would like to thank Richard Greene for fabricating the ampoule lowering mechanism. This work was supported by the U.S. Department of Energy, Office of Defense Nuclear Nonproliferation Research and development, DNN R&D . The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH10886 with the U.S. Department of Energy.

Publisher Copyright:
© Published by Elsevier B.V.

Keywords

A1. Characterization
A1. Defects
A1. Te-inclusions
A1.Subgrain boundary
B2. CdTeSe
B2. Semiconducting II-VI materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2014.10.057

Cite this

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title = "Compositional homogeneity and X-ray topographic analyses of CdTexSe1-x grown by the vertical Bridgman technique",

abstract = "We grew CdTexSe1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS' X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTexSe1-x crystals. We noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks.",

keywords = "A1. Characterization, A1. Defects, A1. Te-inclusions, A1.Subgrain boundary, B2. CdTeSe, B2. Semiconducting II-VI materials",

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note = "Funding Information: The authors would like to thank Richard Greene for fabricating the ampoule lowering mechanism. This work was supported by the U.S. Department of Energy, Office of Defense Nuclear Nonproliferation Research and development, DNN R&D . The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH10886 with the U.S. Department of Energy. Publisher Copyright: {\textcopyright} Published by Elsevier B.V.",

year = "2015",

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doi = "10.1016/j.jcrysgro.2014.10.057",

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journal = "Journal of Crystal Growth",

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AU - Roy, U. N.

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - Cui, Y.

AU - Hossain, A.

AU - Lee, K.

AU - Lee, W.

AU - Tappero, R.

AU - Yang, Ge

AU - Cui, Y.

AU - Burger, A.

AU - James, R. B.

N1 - Funding Information: The authors would like to thank Richard Greene for fabricating the ampoule lowering mechanism. This work was supported by the U.S. Department of Energy, Office of Defense Nuclear Nonproliferation Research and development, DNN R&D . The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH10886 with the U.S. Department of Energy. Publisher Copyright: © Published by Elsevier B.V.

PY - 2015/2/1

Y1 - 2015/2/1

N2 - We grew CdTexSe1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS' X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTexSe1-x crystals. We noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks.

AB - We grew CdTexSe1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS' X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTexSe1-x crystals. We noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks.

KW - A1. Characterization

KW - A1. Defects

KW - A1. Te-inclusions

KW - A1.Subgrain boundary

KW - B2. CdTeSe

KW - B2. Semiconducting II-VI materials

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