Abstract
The thermoelectric properties of In4Se3 compounds were investigated, and their unique charge and thermal transport behaviours were interpreted in terms of condenson state for the first time. The effects of Sn-doping both on the carrier localization and lattice thermal conductivity were consistent with the proposed condenson model. Some important physical properties, such as the band gap energy of In4Se3 and the binding energy of the condenson state, are also presented.
Original language | English |
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Article number | 275304 |
Journal | Journal of Physics D: Applied Physics |
Volume | 46 |
Issue number | 27 |
DOIs | |
Publication status | Published - 2013 Jul 10 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films