Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3

A. Y. Polyakov; A. A. Vasilev; I. V. Shchemerov; A. V. Chernykh; I. V. Shetinin; E. V. Zhevnerov; A. I. Kochkova; P. B. Lagov; A. V. Miakonkikh; Yu S. Pavlov; U. A. Kobets; In Hwan Lee; A. Kuznetsov; S. J. Pearton

doi:10.1016/j.jallcom.2023.169258

Conducting surface layers formed by hydrogenation of O-implanted β-Ga₂O₃

A. Y. Polyakov, A. A. Vasilev, I. V. Shchemerov, A. V. Chernykh, I. V. Shetinin, E. V. Zhevnerov, A. I. Kochkova, P. B. Lagov, A. V. Miakonkikh, Yu S. Pavlov, U. A. Kobets, In Hwan Lee, A. Kuznetsov, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Lightly n-type β-Ga₂O₃ grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type doped β-Ga₂O₃ substrate was implanted with 1 MeV O ions to a fluence of 10¹⁶ cm⁻². The film remained β-polymorph and showed no broadening of the x-ray rocking curve width after irradiation even though the calculated number of primary defects was very high. The implanted region was characterized by a strong compensation, likely due to the presence of a high density of split Ga vacancy acceptors. Treatment of the irradiated film in dense hydrogen plasma at 330 °C for 0.5 h led to the formation of a conducting surface layer about 0.5 µm-thick with carrier density 10¹⁷ cm⁻³, a suppression of the signal due to Fe acceptors in Deep Level transient Spectroscopy (DLTS) and a strong enhancement of DLTS peak caused by centers at E_c-0.74 eV (so called E2 * traps). The mechanism appears to be that hydrogen plasma treatment leads to creation of a high number of donor states due complexing of hydrogen with Ga vacancies and to passivation of Fe acceptors with hydrogen donors.

Original language	English
Article number	169258
Journal	Journal of Alloys and Compounds
Volume	945
DOIs	https://doi.org/10.1016/j.jallcom.2023.169258
Publication status	Published - 2023 Jun 5

Bibliographical note

Publisher Copyright:
© 2023 Elsevier B.V.

Keywords

Gallium Oxide
Hydrogenation
Implantation
Polymorphs
Vacancies

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jallcom.2023.169258

Cite this

Polyakov, A. Y., Vasilev, A. A., Shchemerov, I. V., Chernykh, A. V., Shetinin, I. V., Zhevnerov, E. V., Kochkova, A. I., Lagov, P. B., Miakonkikh, A. V., Pavlov, Y. S., Kobets, U. A., Lee, I. H., Kuznetsov, A., & Pearton, S. J. (2023). Conducting surface layers formed by hydrogenation of O-implanted β-Ga₂O₃. Journal of Alloys and Compounds, 945, Article 169258. https://doi.org/10.1016/j.jallcom.2023.169258

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abstract = "Lightly n-type β-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type doped β-Ga2O3 substrate was implanted with 1 MeV O ions to a fluence of 1016 cm−2. The film remained β-polymorph and showed no broadening of the x-ray rocking curve width after irradiation even though the calculated number of primary defects was very high. The implanted region was characterized by a strong compensation, likely due to the presence of a high density of split Ga vacancy acceptors. Treatment of the irradiated film in dense hydrogen plasma at 330 °C for 0.5 h led to the formation of a conducting surface layer about 0.5 µm-thick with carrier density 1017 cm−3, a suppression of the signal due to Fe acceptors in Deep Level transient Spectroscopy (DLTS) and a strong enhancement of DLTS peak caused by centers at Ec-0.74 eV (so called E2 * traps). The mechanism appears to be that hydrogen plasma treatment leads to creation of a high number of donor states due complexing of hydrogen with Ga vacancies and to passivation of Fe acceptors with hydrogen donors.",

keywords = "Gallium Oxide, Hydrogenation, Implantation, Polymorphs, Vacancies",

author = "Polyakov, {A. Y.} and Vasilev, {A. A.} and Shchemerov, {I. V.} and Chernykh, {A. V.} and Shetinin, {I. V.} and Zhevnerov, {E. V.} and Kochkova, {A. I.} and Lagov, {P. B.} and Miakonkikh, {A. V.} and Pavlov, {Yu S.} and Kobets, {U. A.} and Lee, {In Hwan} and A. Kuznetsov and Pearton, {S. J.}",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = jun,

day = "5",

doi = "10.1016/j.jallcom.2023.169258",

language = "English",

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T1 - Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3

AU - Polyakov, A. Y.

AU - Vasilev, A. A.

AU - Shchemerov, I. V.

AU - Chernykh, A. V.

AU - Shetinin, I. V.

AU - Zhevnerov, E. V.

AU - Kochkova, A. I.

AU - Lagov, P. B.

AU - Miakonkikh, A. V.

AU - Pavlov, Yu S.

AU - Kobets, U. A.

AU - Lee, In Hwan

AU - Kuznetsov, A.

AU - Pearton, S. J.

PY - 2023/6/5

Y1 - 2023/6/5

N2 - Lightly n-type β-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type doped β-Ga2O3 substrate was implanted with 1 MeV O ions to a fluence of 1016 cm−2. The film remained β-polymorph and showed no broadening of the x-ray rocking curve width after irradiation even though the calculated number of primary defects was very high. The implanted region was characterized by a strong compensation, likely due to the presence of a high density of split Ga vacancy acceptors. Treatment of the irradiated film in dense hydrogen plasma at 330 °C for 0.5 h led to the formation of a conducting surface layer about 0.5 µm-thick with carrier density 1017 cm−3, a suppression of the signal due to Fe acceptors in Deep Level transient Spectroscopy (DLTS) and a strong enhancement of DLTS peak caused by centers at Ec-0.74 eV (so called E2 * traps). The mechanism appears to be that hydrogen plasma treatment leads to creation of a high number of donor states due complexing of hydrogen with Ga vacancies and to passivation of Fe acceptors with hydrogen donors.

AB - Lightly n-type β-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type doped β-Ga2O3 substrate was implanted with 1 MeV O ions to a fluence of 1016 cm−2. The film remained β-polymorph and showed no broadening of the x-ray rocking curve width after irradiation even though the calculated number of primary defects was very high. The implanted region was characterized by a strong compensation, likely due to the presence of a high density of split Ga vacancy acceptors. Treatment of the irradiated film in dense hydrogen plasma at 330 °C for 0.5 h led to the formation of a conducting surface layer about 0.5 µm-thick with carrier density 1017 cm−3, a suppression of the signal due to Fe acceptors in Deep Level transient Spectroscopy (DLTS) and a strong enhancement of DLTS peak caused by centers at Ec-0.74 eV (so called E2 * traps). The mechanism appears to be that hydrogen plasma treatment leads to creation of a high number of donor states due complexing of hydrogen with Ga vacancies and to passivation of Fe acceptors with hydrogen donors.

KW - Gallium Oxide

KW - Hydrogenation

KW - Implantation

KW - Polymorphs

KW - Vacancies

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