Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3

A. Y. Polyakov, A. A. Vasilev, I. V. Shchemerov, A. V. Chernykh, I. V. Shetinin, E. V. Zhevnerov, A. I. Kochkova, P. B. Lagov, A. V. Miakonkikh, Yu S. Pavlov, U. A. Kobets, In Hwan Lee, A. Kuznetsov, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Lightly n-type β-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type doped β-Ga2O3 substrate was implanted with 1 MeV O ions to a fluence of 1016 cm−2. The film remained β-polymorph and showed no broadening of the x-ray rocking curve width after irradiation even though the calculated number of primary defects was very high. The implanted region was characterized by a strong compensation, likely due to the presence of a high density of split Ga vacancy acceptors. Treatment of the irradiated film in dense hydrogen plasma at 330 °C for 0.5 h led to the formation of a conducting surface layer about 0.5 µm-thick with carrier density 1017 cm−3, a suppression of the signal due to Fe acceptors in Deep Level transient Spectroscopy (DLTS) and a strong enhancement of DLTS peak caused by centers at Ec-0.74 eV (so called E2 * traps). The mechanism appears to be that hydrogen plasma treatment leads to creation of a high number of donor states due complexing of hydrogen with Ga vacancies and to passivation of Fe acceptors with hydrogen donors.

Original languageEnglish
Article number169258
JournalJournal of Alloys and Compounds
Volume945
DOIs
Publication statusPublished - 2023 Jun 5

Bibliographical note

Funding Information:
The work at NUST MISiS was supported in part by a grant from the Ministry of Science and Higher Education of Russian Federation (Agreement # 075–15-2022–1113 ). The work at UF was funded by the Defense Threat Reduction Agency ( DTRA ) as part of the Interaction of Ionizing Radiation with Matter University Research Alliance (IIRM-URA) under contract number HDTRA1–20-2–0002 . The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at UF was also supported by NSF DMR 1856662 (James Edgar).

Publisher Copyright:
© 2023 Elsevier B.V.

Keywords

  • Gallium Oxide
  • Hydrogenation
  • Implantation
  • Polymorphs
  • Vacancies

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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