Consideration of Discrete Interface Traps in InGaAs/GaAs Heterojunctions

Jichai Jeong; Tuviah Chlesinger; Arthur G. Milnes

doi:10.1109/T-ED.1987.23175

Consideration of Discrete Interface Traps in InGaAs/GaAs Heterojunctions

Jichai Jeong, Tuviah Chlesinger, Arthur G. Milnes

Department of Brain and Cognitive Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Poisson's equation has been applied to model the capacitance-voltage (C-V) profile of a Schottky-barrier n-N heterojunction of Au/nln0.1;Ga0.9As/NGaAs. Interface traps, represented either as a box or sheet of charge, have been included in the calculation. Two electron accumulation peaks are observed. One, next to the region depleted of electrons, is related to the interface trap occupancy, and the other is related to the two-dimensional electron gas at the heterojunction. Qualitative agreement is obtained between the calculated and experimentally determined C-V electron profile (300 to 77 K) if a trap Ec - 0.13 eV at a concentration -8 × 1010 cm -2 in a 300-Å box-like distribution is included in the calculation. For MBE grown nln0.1;Ga0.9;As/NGaAs deep-level transient spectroscopy suggests that the interface traps are at Ec - 0.13 and 0.17 eV with capture cross sections of about 2 × 10-14 and 1 × 10 -15 cm2.

Original language	English
Pages (from-to)	1911-1918
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	34
Issue number	9
DOIs	https://doi.org/10.1109/T-ED.1987.23175
Publication status	Published - 1987 Sept

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1987.23175

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title = "Consideration of Discrete Interface Traps in InGaAs/GaAs Heterojunctions",

abstract = "Poisson's equation has been applied to model the capacitance-voltage (C-V) profile of a Schottky-barrier n-N heterojunction of Au/nln0.1;Ga0.9As/NGaAs. Interface traps, represented either as a box or sheet of charge, have been included in the calculation. Two electron accumulation peaks are observed. One, next to the region depleted of electrons, is related to the interface trap occupancy, and the other is related to the two-dimensional electron gas at the heterojunction. Qualitative agreement is obtained between the calculated and experimentally determined C-V electron profile (300 to 77 K) if a trap Ec - 0.13 eV at a concentration -8 × 1010 cm -2 in a 300-{\AA} box-like distribution is included in the calculation. For MBE grown nln0.1;Ga0.9;As/NGaAs deep-level transient spectroscopy suggests that the interface traps are at Ec - 0.13 and 0.17 eV with capture cross sections of about 2 × 10-14 and 1 × 10 -15 cm2.",

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AU - Jeong, Jichai

AU - Chlesinger, Tuviah

AU - Milnes, Arthur G.

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Y1 - 1987/9

N2 - Poisson's equation has been applied to model the capacitance-voltage (C-V) profile of a Schottky-barrier n-N heterojunction of Au/nln0.1;Ga0.9As/NGaAs. Interface traps, represented either as a box or sheet of charge, have been included in the calculation. Two electron accumulation peaks are observed. One, next to the region depleted of electrons, is related to the interface trap occupancy, and the other is related to the two-dimensional electron gas at the heterojunction. Qualitative agreement is obtained between the calculated and experimentally determined C-V electron profile (300 to 77 K) if a trap Ec - 0.13 eV at a concentration -8 × 1010 cm -2 in a 300-Å box-like distribution is included in the calculation. For MBE grown nln0.1;Ga0.9;As/NGaAs deep-level transient spectroscopy suggests that the interface traps are at Ec - 0.13 and 0.17 eV with capture cross sections of about 2 × 10-14 and 1 × 10 -15 cm2.

AB - Poisson's equation has been applied to model the capacitance-voltage (C-V) profile of a Schottky-barrier n-N heterojunction of Au/nln0.1;Ga0.9As/NGaAs. Interface traps, represented either as a box or sheet of charge, have been included in the calculation. Two electron accumulation peaks are observed. One, next to the region depleted of electrons, is related to the interface trap occupancy, and the other is related to the two-dimensional electron gas at the heterojunction. Qualitative agreement is obtained between the calculated and experimentally determined C-V electron profile (300 to 77 K) if a trap Ec - 0.13 eV at a concentration -8 × 1010 cm -2 in a 300-Å box-like distribution is included in the calculation. For MBE grown nln0.1;Ga0.9;As/NGaAs deep-level transient spectroscopy suggests that the interface traps are at Ec - 0.13 and 0.17 eV with capture cross sections of about 2 × 10-14 and 1 × 10 -15 cm2.

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JO - IEEE Transactions on Electron Devices

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ER -

Consideration of Discrete Interface Traps in InGaAs/GaAs Heterojunctions

Abstract

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