Consideration of Discrete Interface Traps in InGaAs/GaAs Heterojunctions

Jichai Jeong, Tuviah Chlesinger, Arthur G. Milnes

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    17 Citations (Scopus)

    Abstract

    Poisson's equation has been applied to model the capacitance-voltage (C-V) profile of a Schottky-barrier n-N heterojunction of Au/nln0.1;Ga0.9As/NGaAs. Interface traps, represented either as a box or sheet of charge, have been included in the calculation. Two electron accumulation peaks are observed. One, next to the region depleted of electrons, is related to the interface trap occupancy, and the other is related to the two-dimensional electron gas at the heterojunction. Qualitative agreement is obtained between the calculated and experimentally determined C-V electron profile (300 to 77 K) if a trap Ec - 0.13 eV at a concentration -8 × 1010 cm -2 in a 300-Å box-like distribution is included in the calculation. For MBE grown nln0.1;Ga0.9;As/NGaAs deep-level transient spectroscopy suggests that the interface traps are at Ec - 0.13 and 0.17 eV with capture cross sections of about 2 × 10-14 and 1 × 10 -15 cm2.

    Original languageEnglish
    Pages (from-to)1911-1918
    Number of pages8
    JournalIEEE Transactions on Electron Devices
    Volume34
    Issue number9
    DOIs
    Publication statusPublished - 1987 Sept

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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