Consideration of linearity in cascode low noise amplifiers using double derivative superposition method with a tuned inductor

Chi Wan Park; Jichai Jeong

doi:10.1109/KJMW.2007.4402230

Consideration of linearity in cascode low noise amplifiers using double derivative superposition method with a tuned inductor

Chi Wan Park, Jichai Jeong

Department of Brain and Cognitive Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

In this paper, we propose a highly linear low noise amplifier (LNA) using the double derivative superposition method with a tuned inductor. This topology has an auxiliary common gate stage of the cascode amplifier to cancel each third order intermodulation distortion (IMD3) component and can provide a high third order input intercept point (IIP3) for the 5.25 GHz frequency band. From the simulation results using the TSMC 0.18 μm RF CMOS process, the IIP3 in the proposed cascode LNAs can be improved by 9 dB, compared with the conventional derivative superposition method. The proposed low noise amplifier achieves an IIP3 of +15 dBm with a gain of 10.5 dB, a noise figure (NF) of 2.4 dB, and a power consumption of 6 mA at 1.5 V.

Original language	English
Title of host publication	2007 Korea-Japan Microwave Conference, KJMW2007, Technical Digest 2007
Pages	21-24
Number of pages	4
DOIs	https://doi.org/10.1109/KJMW.2007.4402230
Publication status	Published - 2007
Event	2007 Korea-Japan MicroWave Conference, KJMW 2007 - Naha, Okinawa, Japan Duration: 2007 Nov 15 → 2007 Nov 16

Publication series

Name	2007 Korea-Japan Microwave Conference, KJMW2007, Technical Digest 2007

Other

Other	2007 Korea-Japan MicroWave Conference, KJMW 2007
Country/Territory	Japan
City	Naha, Okinawa
Period	07/11/15 → 07/11/16

Keywords

Derivative superposition (DS)
Field-effect transistor (FET)
Inter-modulation distortion (IMD)
Low noise amplifier (LNA)
Third order input intercept point (IIP3)

ASJC Scopus subject areas

Electrical and Electronic Engineering
Communication

Access to Document

10.1109/KJMW.2007.4402230

Cite this

Park, C. W., & Jeong, J. (2007). Consideration of linearity in cascode low noise amplifiers using double derivative superposition method with a tuned inductor. In 2007 Korea-Japan Microwave Conference, KJMW2007, Technical Digest 2007 (pp. 21-24). [4402230] (2007 Korea-Japan Microwave Conference, KJMW2007, Technical Digest 2007). https://doi.org/10.1109/KJMW.2007.4402230

Consideration of linearity in cascode low noise amplifiers using double derivative superposition method with a tuned inductor. / Park, Chi Wan; Jeong, Jichai.
2007 Korea-Japan Microwave Conference, KJMW2007, Technical Digest 2007. 2007. p. 21-24 4402230 (2007 Korea-Japan Microwave Conference, KJMW2007, Technical Digest 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Park, CW & Jeong, J 2007, Consideration of linearity in cascode low noise amplifiers using double derivative superposition method with a tuned inductor. in 2007 Korea-Japan Microwave Conference, KJMW2007, Technical Digest 2007., 4402230, 2007 Korea-Japan Microwave Conference, KJMW2007, Technical Digest 2007, pp. 21-24, 2007 Korea-Japan MicroWave Conference, KJMW 2007, Naha, Okinawa, Japan, 07/11/15. https://doi.org/10.1109/KJMW.2007.4402230

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abstract = "In this paper, we propose a highly linear low noise amplifier (LNA) using the double derivative superposition method with a tuned inductor. This topology has an auxiliary common gate stage of the cascode amplifier to cancel each third order intermodulation distortion (IMD3) component and can provide a high third order input intercept point (IIP3) for the 5.25 GHz frequency band. From the simulation results using the TSMC 0.18 μm RF CMOS process, the IIP3 in the proposed cascode LNAs can be improved by 9 dB, compared with the conventional derivative superposition method. The proposed low noise amplifier achieves an IIP3 of +15 dBm with a gain of 10.5 dB, a noise figure (NF) of 2.4 dB, and a power consumption of 6 mA at 1.5 V.",

keywords = "Derivative superposition (DS), Field-effect transistor (FET), Inter-modulation distortion (IMD), Low noise amplifier (LNA), Third order input intercept point (IIP3)",

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AB - In this paper, we propose a highly linear low noise amplifier (LNA) using the double derivative superposition method with a tuned inductor. This topology has an auxiliary common gate stage of the cascode amplifier to cancel each third order intermodulation distortion (IMD3) component and can provide a high third order input intercept point (IIP3) for the 5.25 GHz frequency band. From the simulation results using the TSMC 0.18 μm RF CMOS process, the IIP3 in the proposed cascode LNAs can be improved by 9 dB, compared with the conventional derivative superposition method. The proposed low noise amplifier achieves an IIP3 of +15 dBm with a gain of 10.5 dB, a noise figure (NF) of 2.4 dB, and a power consumption of 6 mA at 1.5 V.

KW - Derivative superposition (DS)

KW - Field-effect transistor (FET)

KW - Inter-modulation distortion (IMD)

KW - Low noise amplifier (LNA)

KW - Third order input intercept point (IIP3)

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Consideration of linearity in cascode low noise amplifiers using double derivative superposition method with a tuned inductor

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