Abstract
We have developed a new way of the constant growth technique to conserve a grating height of vertical-stacked V-groove AlGaAs/GaAs multilayer on submicron gratings up to 1.5 μm thickness by a low-pressure metalorganic chemical vapor deposition. The V-shaped GaAs buffer, grown on thermally deformed submicron gratings, has an important role in overcoming mass transport effects by recovering the deformed grating profile from sinusoidal to V-shaped. The low AlAs mole fraction is favorable to preserve the grating height up to a greater thickness. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.
Original language | English |
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Pages (from-to) | 201-207 |
Number of pages | 7 |
Journal | Journal of Crystal Growth |
Volume | 221 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2000 Dec |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry