Contact barriers in a single ZnO nanowire device

Kanghyun Kim, Haeyong Kang, Hyeyoung Kim, Jong Soo Lee, Sangtae Kim, Woun Kang, Gyu Tae Kim

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be ∼30 meV by considering the Arrhenious plot of the two-probe resistance, the thermionic emission conduction, and the Fowler-Nordheim tunneling model. The net voltages applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents. The activation energy of the four-probe resistance was about 2.4 mV which was 1/11th of that of the two-probe resistance. The Fowler-Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime as lowering the temperatures below T<100 K.

Original languageEnglish
Pages (from-to)253-256
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Issue number2
Publication statusPublished - 2009 Feb

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science


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