Abstract
Contact-resistance reduction methods were investigated for the contact between Si layer and indium tin oxide (ITO) when the number of photolithography-mask step processes needs to be reduced in the new polycrystalline silicon thin-film-transistor (TFT) device structure. A barrier oxide has been developed for ITO/Si contact in polysilicon TFT. Titanium oxide located between Si and ITO may prevent the formation of silicon oxide that degrades the contact resistance. This method is useful for displays because it meets the requirements for the electric and optical characteristics.
| Original language | English |
|---|---|
| Pages (from-to) | S1-S4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 48 |
| Issue number | SUPPL. 1 |
| Publication status | Published - 2006 Jan |
Keywords
- Contact resistance
- Indium tin oxide
- Polycrystalline silicon TFT
ASJC Scopus subject areas
- General Physics and Astronomy