Contact resistance reduction using dielectric materials of nanoscale thickness on silicon for monolithic 3D integration

Seung Hwan Kim; Gwang Sik Kim; Seyong Oh; Jin Hong Park; Hyun Yong Yu

doi:10.1166/jnn.2016.13705

Contact resistance reduction using dielectric materials of nanoscale thickness on silicon for monolithic 3D integration

Seung Hwan Kim, Gwang Sik Kim, Seyong Oh, Jin Hong Park, Hyun Yong Yu

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this work, we demonstrated the characteristics of metal-interlayer-semiconductor (MIS) structures using various dielectric materials of nanoscale thickness, in particular HfO₂, Al₂O₃, ZnO, and TiO₂, for contact resistivity reduction of silicon (Si) source/drain (S/D) ohmic contacts. The ultrathin dielectric materials can induce Fermi-level unpinning between the metal and the Si by preventing the penetration of metal-induced gap states (MIGS) into the Si. n-Si (7 × 10¹⁸ cm^-3) and n⁺-Si (1 × 10²¹ cm^-3) were used to confirm the characteristics of the MIS structures and to achieve low specific contact resistivity (ρ_c), respectively. The Ti/Al₂O₃ (2 nm)/n⁺-Si contact showed a low ρ_c of 5.1 × 10^-8 Ω · cm² with high thermal stability, about 125 times lower ρ_c than that of a metal-semiconductor (MS) contact. These results suggest that the proposed non-alloyed MIS contact can be incorporated into monolithic three-dimensional (3D) complementary metal-oxide-semiconductor (CMOS) integration technologies.

Original language	English
Pages (from-to)	12764-12767
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	16
Issue number	12
DOIs	https://doi.org/10.1166/jnn.2016.13705
Publication status	Published - 2016 Dec 1

Bibliographical note

Funding Information:
This work was supported in part by the Human Resources Development program (No. 20144030200580) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Government Ministry of Trade, Industry and Energy, in part by the Technology Innovation Program through the Ministry of Trade, Industry and Energy, Korea, under Grant 10052804 and in part by Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045490).

Publisher Copyright:
Copyright © 2016 American Scientific Publishers All rights reserved.

Keywords

Fermi-level pinning
Monolithic three-dimensional
Nanoscale
Silicon
Source/drain contact
Specific contact resistivity

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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10.1166/jnn.2016.13705

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title = "Contact resistance reduction using dielectric materials of nanoscale thickness on silicon for monolithic 3D integration",

abstract = "In this work, we demonstrated the characteristics of metal-interlayer-semiconductor (MIS) structures using various dielectric materials of nanoscale thickness, in particular HfO2, Al2O3, ZnO, and TiO2, for contact resistivity reduction of silicon (Si) source/drain (S/D) ohmic contacts. The ultrathin dielectric materials can induce Fermi-level unpinning between the metal and the Si by preventing the penetration of metal-induced gap states (MIGS) into the Si. n-Si (7 × 1018 cm-3) and n+-Si (1 × 1021 cm-3) were used to confirm the characteristics of the MIS structures and to achieve low specific contact resistivity (ρc), respectively. The Ti/Al2O3 (2 nm)/n+-Si contact showed a low ρc of 5.1 × 10-8 Ω · cm2 with high thermal stability, about 125 times lower ρc than that of a metal-semiconductor (MS) contact. These results suggest that the proposed non-alloyed MIS contact can be incorporated into monolithic three-dimensional (3D) complementary metal-oxide-semiconductor (CMOS) integration technologies.",

keywords = "Fermi-level pinning, Monolithic three-dimensional, Nanoscale, Silicon, Source/drain contact, Specific contact resistivity",

author = "Kim, {Seung Hwan} and Kim, {Gwang Sik} and Seyong Oh and Park, {Jin Hong} and Yu, {Hyun Yong}",

note = "Funding Information: This work was supported in part by the Human Resources Development program (No. 20144030200580) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Government Ministry of Trade, Industry and Energy, in part by the Technology Innovation Program through the Ministry of Trade, Industry and Energy, Korea, under Grant 10052804 and in part by Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045490). Publisher Copyright: Copyright {\textcopyright} 2016 American Scientific Publishers All rights reserved.",

year = "2016",

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doi = "10.1166/jnn.2016.13705",

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AU - Kim, Seung Hwan

AU - Kim, Gwang Sik

AU - Oh, Seyong

AU - Park, Jin Hong

AU - Yu, Hyun Yong

N1 - Funding Information: This work was supported in part by the Human Resources Development program (No. 20144030200580) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Government Ministry of Trade, Industry and Energy, in part by the Technology Innovation Program through the Ministry of Trade, Industry and Energy, Korea, under Grant 10052804 and in part by Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045490). Publisher Copyright: Copyright © 2016 American Scientific Publishers All rights reserved.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - In this work, we demonstrated the characteristics of metal-interlayer-semiconductor (MIS) structures using various dielectric materials of nanoscale thickness, in particular HfO2, Al2O3, ZnO, and TiO2, for contact resistivity reduction of silicon (Si) source/drain (S/D) ohmic contacts. The ultrathin dielectric materials can induce Fermi-level unpinning between the metal and the Si by preventing the penetration of metal-induced gap states (MIGS) into the Si. n-Si (7 × 1018 cm-3) and n+-Si (1 × 1021 cm-3) were used to confirm the characteristics of the MIS structures and to achieve low specific contact resistivity (ρc), respectively. The Ti/Al2O3 (2 nm)/n+-Si contact showed a low ρc of 5.1 × 10-8 Ω · cm2 with high thermal stability, about 125 times lower ρc than that of a metal-semiconductor (MS) contact. These results suggest that the proposed non-alloyed MIS contact can be incorporated into monolithic three-dimensional (3D) complementary metal-oxide-semiconductor (CMOS) integration technologies.

AB - In this work, we demonstrated the characteristics of metal-interlayer-semiconductor (MIS) structures using various dielectric materials of nanoscale thickness, in particular HfO2, Al2O3, ZnO, and TiO2, for contact resistivity reduction of silicon (Si) source/drain (S/D) ohmic contacts. The ultrathin dielectric materials can induce Fermi-level unpinning between the metal and the Si by preventing the penetration of metal-induced gap states (MIGS) into the Si. n-Si (7 × 1018 cm-3) and n+-Si (1 × 1021 cm-3) were used to confirm the characteristics of the MIS structures and to achieve low specific contact resistivity (ρc), respectively. The Ti/Al2O3 (2 nm)/n+-Si contact showed a low ρc of 5.1 × 10-8 Ω · cm2 with high thermal stability, about 125 times lower ρc than that of a metal-semiconductor (MS) contact. These results suggest that the proposed non-alloyed MIS contact can be incorporated into monolithic three-dimensional (3D) complementary metal-oxide-semiconductor (CMOS) integration technologies.

KW - Fermi-level pinning

KW - Monolithic three-dimensional

KW - Nanoscale

KW - Silicon

KW - Source/drain contact

KW - Specific contact resistivity

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IS - 12

ER -

Contact resistance reduction using dielectric materials of nanoscale thickness on silicon for monolithic 3D integration

Abstract

Bibliographical note

Keywords

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