Contacting mechanically exfoliated β-Ga2O3 nanobelts for (opto)electronic device applications

Jinho Bae, Hong Yeol Kim, Jihyun Kim

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23 Citations (Scopus)


We systematically investigated the properties of metal contacts deposited on exfoliated β-Ga2O3 nanobelts. Unintentionally doped β-Ga2O3 was mechanically exfoliated from bulk β-Ga2O3 crystal and transferred onto SiO2/Si substrate having a back gate configuration. Electrodes were formed by depositing Ti/Au or Ni/Au onto the transferred β-Ga2O3 nanobelts, followed by rapid thermal annealing (RTA) with different ambient gases and temperatures. Using scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDS), it was shown that titanium reacts with oxygen to form titanium oxide, which has ohmic behavior. In contrast, nickel does not form an ohmic contact despite 600°C thermal treatment. The lower oxygen partial pressure in a nitrogen atmosphere as compared to air results in more oxygen vacancies within the Ga2O3 nanobelts during RTA and a negative threshold voltage shift. A decreased current level after high temperature annealing can be ascribed to significant outward diffusion of oxygen and gallium atoms and to oxidation of the metal electrode. Our results can pave a route to demonstrating high performance β-Ga2O3 nanobelt-based (opto)electronic devices.

Original languageEnglish
Pages (from-to)Q3045-Q3048
JournalECS Journal of Solid State Science and Technology
Issue number2
Publication statusPublished - 2017

Bibliographical note

Funding Information:
This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy(MOTIE) of the Republic of Korea (No. 20163010012140).

Publisher Copyright:
© 2016 The Electrochemical Society. All rights reserved.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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