Continuous wave operation of a 250 mW AlGaAs laser diode

T. G. Kim; D. S. Kim; K. C. Kim; K. Y. Jang; G. W. Moon; J. I. Park; S. W. Lee; M. D. Kim; J. H. Koh

doi:10.1016/j.sse.2005.08.007

Continuous wave operation of a 250 mW AlGaAs laser diode

T. G. Kim, D. S. Kim, K. C. Kim, K. Y. Jang, G. W. Moon, J. I. Park, S. W. Lee, M. D. Kim, J. H. Koh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report a record high continuous wave (CW) output power of 250 mW for the 780 nm band AlGaAs laser. The selectively buried ridge (SBR) structure was used and each layer of the laser was designed to have the lowest defect density by using the deep level transient spectroscopy (DLTS) analyses. The laser operated at a peak wavelength of 783 nm with a threshold current of 38 mA. The stable fundamental transverse mode was observed at 100 mW, 70 °C for more than 3000 h. The far-field aspect ratio, a ratio of far-field vertical angle over far-field parallel angle to the junction plane, was measured to be 1.8, which is small enough for the high density CD-R system.

Original language	English
Pages (from-to)	1674-1677
Number of pages	4
Journal	Solid-State Electronics
Volume	49
Issue number	10
DOIs	https://doi.org/10.1016/j.sse.2005.08.007
Publication status	Published - 2005 Oct

Bibliographical note

Funding Information:
This work was supported by KOSEF through q-Psi at Hanyang University.

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

Keywords

AlGaAs
DLTS
Defect
High-power laser

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2005.08.007

Cite this

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title = "Continuous wave operation of a 250 mW AlGaAs laser diode",

abstract = "We report a record high continuous wave (CW) output power of 250 mW for the 780 nm band AlGaAs laser. The selectively buried ridge (SBR) structure was used and each layer of the laser was designed to have the lowest defect density by using the deep level transient spectroscopy (DLTS) analyses. The laser operated at a peak wavelength of 783 nm with a threshold current of 38 mA. The stable fundamental transverse mode was observed at 100 mW, 70 °C for more than 3000 h. The far-field aspect ratio, a ratio of far-field vertical angle over far-field parallel angle to the junction plane, was measured to be 1.8, which is small enough for the high density CD-R system.",

keywords = "AlGaAs, DLTS, Defect, High-power laser",

author = "Kim, {T. G.} and Kim, {D. S.} and Kim, {K. C.} and Jang, {K. Y.} and Moon, {G. W.} and Park, {J. I.} and Lee, {S. W.} and Kim, {M. D.} and Koh, {J. H.}",

year = "2005",

month = oct,

doi = "10.1016/j.sse.2005.08.007",

language = "English",

volume = "49",

pages = "1674--1677",

journal = "Solid-State Electronics",

issn = "0038-1101",

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T1 - Continuous wave operation of a 250 mW AlGaAs laser diode

AU - Kim, T. G.

AU - Kim, D. S.

AU - Kim, K. C.

AU - Jang, K. Y.

AU - Moon, G. W.

AU - Park, J. I.

AU - Lee, S. W.

AU - Kim, M. D.

AU - Koh, J. H.

PY - 2005/10

Y1 - 2005/10

N2 - We report a record high continuous wave (CW) output power of 250 mW for the 780 nm band AlGaAs laser. The selectively buried ridge (SBR) structure was used and each layer of the laser was designed to have the lowest defect density by using the deep level transient spectroscopy (DLTS) analyses. The laser operated at a peak wavelength of 783 nm with a threshold current of 38 mA. The stable fundamental transverse mode was observed at 100 mW, 70 °C for more than 3000 h. The far-field aspect ratio, a ratio of far-field vertical angle over far-field parallel angle to the junction plane, was measured to be 1.8, which is small enough for the high density CD-R system.

AB - We report a record high continuous wave (CW) output power of 250 mW for the 780 nm band AlGaAs laser. The selectively buried ridge (SBR) structure was used and each layer of the laser was designed to have the lowest defect density by using the deep level transient spectroscopy (DLTS) analyses. The laser operated at a peak wavelength of 783 nm with a threshold current of 38 mA. The stable fundamental transverse mode was observed at 100 mW, 70 °C for more than 3000 h. The far-field aspect ratio, a ratio of far-field vertical angle over far-field parallel angle to the junction plane, was measured to be 1.8, which is small enough for the high density CD-R system.

KW - AlGaAs

KW - DLTS

KW - Defect

KW - High-power laser

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

Continuous wave operation of a 250 mW AlGaAs laser diode

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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