Continuous wave operation of a 250 mW AlGaAs laser diode

T. G. Kim, D. S. Kim, K. C. Kim, K. Y. Jang, G. W. Moon, J. I. Park, S. W. Lee, M. D. Kim, J. H. Koh

Research output: Contribution to journalArticlepeer-review


We report a record high continuous wave (CW) output power of 250 mW for the 780 nm band AlGaAs laser. The selectively buried ridge (SBR) structure was used and each layer of the laser was designed to have the lowest defect density by using the deep level transient spectroscopy (DLTS) analyses. The laser operated at a peak wavelength of 783 nm with a threshold current of 38 mA. The stable fundamental transverse mode was observed at 100 mW, 70 °C for more than 3000 h. The far-field aspect ratio, a ratio of far-field vertical angle over far-field parallel angle to the junction plane, was measured to be 1.8, which is small enough for the high density CD-R system.

Original languageEnglish
Pages (from-to)1674-1677
Number of pages4
JournalSolid-State Electronics
Issue number10
Publication statusPublished - 2005 Oct

Bibliographical note

Funding Information:
This work was supported by KOSEF through q-Psi at Hanyang University.

Copyright 2008 Elsevier B.V., All rights reserved.


  • AlGaAs
  • DLTS
  • Defect
  • High-power laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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