Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD

Sungeun Park; Hyomin Park; Dongseop Kim; Junggyu Nam; Jung Yup Yang; Dongho Lee; Byoung Koun Min; Kyung Nam Kim; Se Jin Park; Seongtak Kim; Dongchul Suh; Donghwan Kim; Hae Seok Lee; Yoonmook Kang

doi:10.1016/j.cap.2017.01.014

Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD

Sungeun Park, Hyomin Park, Dongseop Kim, Junggyu Nam, Jung Yup Yang, Dongho Lee, Byoung Koun Min, Kyung Nam Kim, Se Jin Park, Seongtak Kim, Dongchul Suh, Donghwan Kim, Hae Seok Lee, Yoonmook Kang

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Silicon oxynitride (SiON) could be used in combination with silicon nitride (SiN) to form a multilayer anti-reflection coating on the front side of selective emitter solar cells. In this study, these double anti-reflection layers were fabricated by a continuous deposition technique using the plasma enhanced chemical vapor deposition method. We attempted to determine whether this method is fast and cost effective and can achieve higher efficiency for solar cell manufacture. The results show that the short circuit current density for the double layer anti-reflection coating on selective emitter solar cells was higher by 0.5 mA/cm² compared to the single layer coating owing to the improved optical reflectance. The incorporation of a SiN/SiON stack into the anti-reflection layer of the CZ selective emitter solar cells yields an energy conversion efficiency of 19.4%, which is higher than the efficiency (19.18%) for the reference solar cells with single layer SiN anti-reflection coating.

Original language	English
Pages (from-to)	517-521
Number of pages	5
Journal	Current Applied Physics
Volume	17
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2017.01.014
Publication status	Published - 2017 Apr 1

Bibliographical note

Funding Information:
This work was supported by the Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20154030200760). This work was supported by the National Research Foundation of Korea grant funded by Korean Government (MSIP) (2016, University-Institute cooperation program) and supported by a Korea University Grant.

Publisher Copyright:
© 2017 Elsevier B.V.

Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.

Keywords

Anti-reflection coating
Selective emitter
Silicon oxynitride
Silicon solar cells
Stack passivation

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2017.01.014

Cite this

Park, S., Park, H., Kim, D., Nam, J., Yang, J. Y., Lee, D., Min, B. K., Kim, K. N., Park, S. J., Kim, S., Suh, D., Kim, D., Lee, H. S., & Kang, Y. (2017). Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD. Current Applied Physics, 17(4), 517-521. https://doi.org/10.1016/j.cap.2017.01.014

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title = "Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD",

abstract = "Silicon oxynitride (SiON) could be used in combination with silicon nitride (SiN) to form a multilayer anti-reflection coating on the front side of selective emitter solar cells. In this study, these double anti-reflection layers were fabricated by a continuous deposition technique using the plasma enhanced chemical vapor deposition method. We attempted to determine whether this method is fast and cost effective and can achieve higher efficiency for solar cell manufacture. The results show that the short circuit current density for the double layer anti-reflection coating on selective emitter solar cells was higher by 0.5 mA/cm2 compared to the single layer coating owing to the improved optical reflectance. The incorporation of a SiN/SiON stack into the anti-reflection layer of the CZ selective emitter solar cells yields an energy conversion efficiency of 19.4%, which is higher than the efficiency (19.18%) for the reference solar cells with single layer SiN anti-reflection coating.",

keywords = "Anti-reflection coating, Selective emitter, Silicon oxynitride, Silicon solar cells, Stack passivation",

author = "Sungeun Park and Hyomin Park and Dongseop Kim and Junggyu Nam and Yang, {Jung Yup} and Dongho Lee and Min, {Byoung Koun} and Kim, {Kyung Nam} and Park, {Se Jin} and Seongtak Kim and Dongchul Suh and Donghwan Kim and Lee, {Hae Seok} and Yoonmook Kang",

note = "Funding Information: This work was supported by the Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20154030200760). This work was supported by the National Research Foundation of Korea grant funded by Korean Government (MSIP) (2016, University-Institute cooperation program) and supported by a Korea University Grant. Publisher Copyright: {\textcopyright} 2017 Elsevier B.V. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

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doi = "10.1016/j.cap.2017.01.014",

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T1 - Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD

AU - Park, Sungeun

AU - Park, Hyomin

AU - Kim, Dongseop

AU - Nam, Junggyu

AU - Yang, Jung Yup

AU - Lee, Dongho

AU - Min, Byoung Koun

AU - Kim, Kyung Nam

AU - Park, Se Jin

AU - Kim, Seongtak

AU - Suh, Dongchul

AU - Kim, Donghwan

AU - Lee, Hae Seok

AU - Kang, Yoonmook

N1 - Funding Information: This work was supported by the Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20154030200760). This work was supported by the National Research Foundation of Korea grant funded by Korean Government (MSIP) (2016, University-Institute cooperation program) and supported by a Korea University Grant. Publisher Copyright: © 2017 Elsevier B.V. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2017/4/1

Y1 - 2017/4/1

N2 - Silicon oxynitride (SiON) could be used in combination with silicon nitride (SiN) to form a multilayer anti-reflection coating on the front side of selective emitter solar cells. In this study, these double anti-reflection layers were fabricated by a continuous deposition technique using the plasma enhanced chemical vapor deposition method. We attempted to determine whether this method is fast and cost effective and can achieve higher efficiency for solar cell manufacture. The results show that the short circuit current density for the double layer anti-reflection coating on selective emitter solar cells was higher by 0.5 mA/cm2 compared to the single layer coating owing to the improved optical reflectance. The incorporation of a SiN/SiON stack into the anti-reflection layer of the CZ selective emitter solar cells yields an energy conversion efficiency of 19.4%, which is higher than the efficiency (19.18%) for the reference solar cells with single layer SiN anti-reflection coating.

AB - Silicon oxynitride (SiON) could be used in combination with silicon nitride (SiN) to form a multilayer anti-reflection coating on the front side of selective emitter solar cells. In this study, these double anti-reflection layers were fabricated by a continuous deposition technique using the plasma enhanced chemical vapor deposition method. We attempted to determine whether this method is fast and cost effective and can achieve higher efficiency for solar cell manufacture. The results show that the short circuit current density for the double layer anti-reflection coating on selective emitter solar cells was higher by 0.5 mA/cm2 compared to the single layer coating owing to the improved optical reflectance. The incorporation of a SiN/SiON stack into the anti-reflection layer of the CZ selective emitter solar cells yields an energy conversion efficiency of 19.4%, which is higher than the efficiency (19.18%) for the reference solar cells with single layer SiN anti-reflection coating.

KW - Anti-reflection coating

KW - Selective emitter

KW - Silicon oxynitride

KW - Silicon solar cells

KW - Stack passivation

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Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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