Control of a- and c-plane preferential orientations of ZnO thin films

Dae Hyung Cho; Ji Hong Kim; Byung Moo Moon; Yeong Deuk Jo; Sang Mo Koo

doi:10.1016/j.apsusc.2008.09.073

Control of a- and c-plane preferential orientations of ZnO thin films

Dae Hyung Cho, Ji Hong Kim, Byung Moo Moon, Yeong Deuk Jo, Sang Mo Koo

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

We report orientation-controllable growth of ZnO thin films and their orientation-dependent electrical characteristics. ZnO thin films were deposited on single-crystalline (1 0 0) LaAlO ₃ and (1 0 0) SrTiO ₃ substrates using pulsed laser deposition (PLD) at different substrate temperatures (400-800 °C). It was found that the orientation of ZnO films could be controlled by using different substrates of single-crystalline (1 0 0) LaAlO ₃ and (1 0 0) SrTiO ₃ . The a-plane (1 1 over(2, ̄) 0) and c-plane (0 0 0 2) oriented ZnO films are formed on LaAlO ₃ and SrTiO ₃ , respectively. In both cases, the degree orientation increased with increasing deposition temperature T _s . Both the surface free energy and the degree of lattice mismatch are ascribed to play an important role for the orientation-controllable growth. Further characterization show that the grain size of the films with both orientations increases for a substrate temperature increase (i.e. from T _s = 400 °C to T _s = 800 °C), whereas the electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for a-plane oriented ZnO films.

Original language	English
Pages (from-to)	3480-3484
Number of pages	5
Journal	Applied Surface Science
Volume	255
Issue number	6
DOIs	https://doi.org/10.1016/j.apsusc.2008.09.073
Publication status	Published - 2009 Jan 1

Bibliographical note

Funding Information:
This work was partly supported by “system IC2010” project of Korea Ministry of Commerce, Industry and Energy.

Keywords

Lattice mismatch
Orientation control
Pulsed laser deposition
TLM
X-ray diffraction
ZnO thin films

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2008.09.073

Cite this

@article{d6d1938705e54576ae84d136adb4c817,

title = "Control of a- and c-plane preferential orientations of ZnO thin films",

abstract = " We report orientation-controllable growth of ZnO thin films and their orientation-dependent electrical characteristics. ZnO thin films were deposited on single-crystalline (1 0 0) LaAlO 3 and (1 0 0) SrTiO 3 substrates using pulsed laser deposition (PLD) at different substrate temperatures (400-800 °C). It was found that the orientation of ZnO films could be controlled by using different substrates of single-crystalline (1 0 0) LaAlO 3 and (1 0 0) SrTiO 3 . The a-plane (1 1 over(2,{\= }) 0) and c-plane (0 0 0 2) oriented ZnO films are formed on LaAlO 3 and SrTiO 3 , respectively. In both cases, the degree orientation increased with increasing deposition temperature T s . Both the surface free energy and the degree of lattice mismatch are ascribed to play an important role for the orientation-controllable growth. Further characterization show that the grain size of the films with both orientations increases for a substrate temperature increase (i.e. from T s = 400 °C to T s = 800 °C), whereas the electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for a-plane oriented ZnO films.",

keywords = "Lattice mismatch, Orientation control, Pulsed laser deposition, TLM, X-ray diffraction, ZnO thin films",

author = "Cho, {Dae Hyung} and Kim, {Ji Hong} and Moon, {Byung Moo} and Jo, {Yeong Deuk} and Koo, {Sang Mo}",

note = "Funding Information: This work was partly supported by “system IC2010” project of Korea Ministry of Commerce, Industry and Energy.",

year = "2009",

month = jan,

day = "1",

doi = "10.1016/j.apsusc.2008.09.073",

language = "English",

volume = "255",

pages = "3480--3484",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "6",

}

TY - JOUR

T1 - Control of a- and c-plane preferential orientations of ZnO thin films

AU - Cho, Dae Hyung

AU - Kim, Ji Hong

AU - Moon, Byung Moo

AU - Jo, Yeong Deuk

AU - Koo, Sang Mo

N1 - Funding Information: This work was partly supported by “system IC2010” project of Korea Ministry of Commerce, Industry and Energy.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - We report orientation-controllable growth of ZnO thin films and their orientation-dependent electrical characteristics. ZnO thin films were deposited on single-crystalline (1 0 0) LaAlO 3 and (1 0 0) SrTiO 3 substrates using pulsed laser deposition (PLD) at different substrate temperatures (400-800 °C). It was found that the orientation of ZnO films could be controlled by using different substrates of single-crystalline (1 0 0) LaAlO 3 and (1 0 0) SrTiO 3 . The a-plane (1 1 over(2, ̄) 0) and c-plane (0 0 0 2) oriented ZnO films are formed on LaAlO 3 and SrTiO 3 , respectively. In both cases, the degree orientation increased with increasing deposition temperature T s . Both the surface free energy and the degree of lattice mismatch are ascribed to play an important role for the orientation-controllable growth. Further characterization show that the grain size of the films with both orientations increases for a substrate temperature increase (i.e. from T s = 400 °C to T s = 800 °C), whereas the electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for a-plane oriented ZnO films.

AB - We report orientation-controllable growth of ZnO thin films and their orientation-dependent electrical characteristics. ZnO thin films were deposited on single-crystalline (1 0 0) LaAlO 3 and (1 0 0) SrTiO 3 substrates using pulsed laser deposition (PLD) at different substrate temperatures (400-800 °C). It was found that the orientation of ZnO films could be controlled by using different substrates of single-crystalline (1 0 0) LaAlO 3 and (1 0 0) SrTiO 3 . The a-plane (1 1 over(2, ̄) 0) and c-plane (0 0 0 2) oriented ZnO films are formed on LaAlO 3 and SrTiO 3 , respectively. In both cases, the degree orientation increased with increasing deposition temperature T s . Both the surface free energy and the degree of lattice mismatch are ascribed to play an important role for the orientation-controllable growth. Further characterization show that the grain size of the films with both orientations increases for a substrate temperature increase (i.e. from T s = 400 °C to T s = 800 °C), whereas the electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for a-plane oriented ZnO films.

KW - Lattice mismatch

KW - Orientation control

KW - Pulsed laser deposition

KW - TLM

KW - X-ray diffraction

KW - ZnO thin films

UR - http://www.scopus.com/inward/record.url?scp=57849094131&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.09.073

DO - 10.1016/j.apsusc.2008.09.073

M3 - Article

AN - SCOPUS:57849094131

SN - 0169-4332

VL - 255

SP - 3480

EP - 3484

JO - Applied Surface Science

JF - Applied Surface Science

IS - 6

ER -

Control of a- and c-plane preferential orientations of ZnO thin films

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this