Abstract
We report orientation-controllable growth of ZnO thin films and their orientation-dependent electrical characteristics. ZnO thin films were deposited on single-crystalline (1 0 0) LaAlO 3 and (1 0 0) SrTiO 3 substrates using pulsed laser deposition (PLD) at different substrate temperatures (400-800 °C). It was found that the orientation of ZnO films could be controlled by using different substrates of single-crystalline (1 0 0) LaAlO 3 and (1 0 0) SrTiO 3 . The a-plane (1 1 over(2, ̄) 0) and c-plane (0 0 0 2) oriented ZnO films are formed on LaAlO 3 and SrTiO 3 , respectively. In both cases, the degree orientation increased with increasing deposition temperature T s . Both the surface free energy and the degree of lattice mismatch are ascribed to play an important role for the orientation-controllable growth. Further characterization show that the grain size of the films with both orientations increases for a substrate temperature increase (i.e. from T s = 400 °C to T s = 800 °C), whereas the electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for a-plane oriented ZnO films.
| Original language | English |
|---|---|
| Pages (from-to) | 3480-3484 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 255 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2009 Jan 1 |
Keywords
- Lattice mismatch
- Orientation control
- Pulsed laser deposition
- TLM
- X-ray diffraction
- ZnO thin films
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films