Control of magnetic domains in Co/Pd multilayered nanowires with perpendicular magnetic anisotropy

Su Jung Noh; Yasuyoshi Miyamoto; Mitsunobu Okuda; Naoto Hayashi; Young Keun Kim

doi:10.1166/jnn.2012.5404

Control of magnetic domains in Co/Pd multilayered nanowires with perpendicular magnetic anisotropy

Su Jung Noh, Yasuyoshi Miyamoto, Mitsunobu Okuda, Naoto Hayashi, Young Keun Kim

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Magnetic domain wall (DW) motion induced by spin transfer torque in magnetic nanowires is of emerging technological interest for its possible applications in spintronic memory or logic devices. Co/Pd multilayered magnetic nanowires with perpendicular magnetic anisotropy were fabricated on the surfaces of Si wafers by ion-beam sputtering. The nanowires had different sized widths and pinning sites formed by an anodic oxidation method via scanning probe microscopy (SPM) with an MFM tip. The magnetic domain structure was changed by an anodic oxidation method. To discover the current-induced DW motion in the Co/Pd nanowires, we employed micromagnetic modeling based on the Landau.Lifschitz.Gilbert (LLG) equation. The split DW motions and configurations due to the edge effects of pinning site and nanowire appeared.

Original language	English
Pages (from-to)	428-432
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	12
Issue number	1
DOIs	https://doi.org/10.1166/jnn.2012.5404
Publication status	Published - 2012

Keywords

Domain wall
Magnetic nanowire
Perpendicular magnetic anisotropy

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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abstract = "Magnetic domain wall (DW) motion induced by spin transfer torque in magnetic nanowires is of emerging technological interest for its possible applications in spintronic memory or logic devices. Co/Pd multilayered magnetic nanowires with perpendicular magnetic anisotropy were fabricated on the surfaces of Si wafers by ion-beam sputtering. The nanowires had different sized widths and pinning sites formed by an anodic oxidation method via scanning probe microscopy (SPM) with an MFM tip. The magnetic domain structure was changed by an anodic oxidation method. To discover the current-induced DW motion in the Co/Pd nanowires, we employed micromagnetic modeling based on the Landau.Lifschitz.Gilbert (LLG) equation. The split DW motions and configurations due to the edge effects of pinning site and nanowire appeared.",

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AU - Miyamoto, Yasuyoshi

AU - Okuda, Mitsunobu

AU - Hayashi, Naoto

AU - Kim, Young Keun

PY - 2012

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AB - Magnetic domain wall (DW) motion induced by spin transfer torque in magnetic nanowires is of emerging technological interest for its possible applications in spintronic memory or logic devices. Co/Pd multilayered magnetic nanowires with perpendicular magnetic anisotropy were fabricated on the surfaces of Si wafers by ion-beam sputtering. The nanowires had different sized widths and pinning sites formed by an anodic oxidation method via scanning probe microscopy (SPM) with an MFM tip. The magnetic domain structure was changed by an anodic oxidation method. To discover the current-induced DW motion in the Co/Pd nanowires, we employed micromagnetic modeling based on the Landau.Lifschitz.Gilbert (LLG) equation. The split DW motions and configurations due to the edge effects of pinning site and nanowire appeared.

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Control of magnetic domains in Co/Pd multilayered nanowires with perpendicular magnetic anisotropy

Abstract

Keywords

ASJC Scopus subject areas

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