Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy

Hyun Jong Park, Hong Yeol Kim, Jun Young Bae, Seonghwan Shin, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Freestanding GaN was grown on sapphire substrate in a horizontal HVPE system, followed by laser lift-off process. The thickness of the freestanding GaN samples was about 350 μm. Si was used as an n-type dopant and the carrier concentrations were non-destructively measured by micro-Raman spectroscopy. The carrier concentrations of GaN samples were changed from 0.62 to 3.7×10 18/cm 3 by varying the Si/Ga ratios from 0.01 to 0.04. Crystalline quality of the freestanding GaN was characterized by X-ray diffraction (XRD). The full-width at half-maximum (FWHM) values of the rocking curves of the (102) plane was changed from 96.9 to 317.5 arcsec depending on Si/Ga ratios. This work provides Si/Ga ratios to obtain various carrier concentrations of the freestanding GaN by HVPE, and proposes micro-Raman spectroscopy as a sensitive technique for carrier concentration measurement.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2012 Jul 1

Bibliographical note

Funding Information:
The research at Korea University was supported by Future-based Technology Development Program (Nano Fields) ( 2011-0029328 ) and Basic Science Research Program ( 2009-0088551 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology and a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy, Republic of Korea (no. 20104010100640 ).


  • A1. Doping
  • A3. Hydride vapor phase epitaxy
  • B1. GaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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