Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy

Hyun Jong Park; Hong Yeol Kim; Jun Young Bae; Seonghwan Shin; Jihyun Kim

doi:10.1016/j.jcrysgro.2011.12.029

Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy

Hyun Jong Park, Hong Yeol Kim, Jun Young Bae, Seonghwan Shin, Jihyun Kim

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Freestanding GaN was grown on sapphire substrate in a horizontal HVPE system, followed by laser lift-off process. The thickness of the freestanding GaN samples was about 350 μm. Si was used as an n-type dopant and the carrier concentrations were non-destructively measured by micro-Raman spectroscopy. The carrier concentrations of GaN samples were changed from 0.62 to 3.7×10 ¹⁸/cm ³ by varying the Si/Ga ratios from 0.01 to 0.04. Crystalline quality of the freestanding GaN was characterized by X-ray diffraction (XRD). The full-width at half-maximum (FWHM) values of the rocking curves of the (102) plane was changed from 96.9 to 317.5 arcsec depending on Si/Ga ratios. This work provides Si/Ga ratios to obtain various carrier concentrations of the freestanding GaN by HVPE, and proposes micro-Raman spectroscopy as a sensitive technique for carrier concentration measurement.

Original language	English
Pages (from-to)	85-88
Number of pages	4
Journal	Journal of Crystal Growth
Volume	350
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.12.029
Publication status	Published - 2012 Jul 1

Bibliographical note

Funding Information:
The research at Korea University was supported by Future-based Technology Development Program (Nano Fields) ( 2011-0029328 ) and Basic Science Research Program ( 2009-0088551 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology and a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy, Republic of Korea (no. 20104010100640 ).

Keywords

A1. Doping
A3. Hydride vapor phase epitaxy
B1. GaN

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2011.12.029

Cite this

@article{848dfae685584613a1574e2bfe290698,

title = "Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy",

abstract = "Freestanding GaN was grown on sapphire substrate in a horizontal HVPE system, followed by laser lift-off process. The thickness of the freestanding GaN samples was about 350 μm. Si was used as an n-type dopant and the carrier concentrations were non-destructively measured by micro-Raman spectroscopy. The carrier concentrations of GaN samples were changed from 0.62 to 3.7×10 18/cm 3 by varying the Si/Ga ratios from 0.01 to 0.04. Crystalline quality of the freestanding GaN was characterized by X-ray diffraction (XRD). The full-width at half-maximum (FWHM) values of the rocking curves of the (102) plane was changed from 96.9 to 317.5 arcsec depending on Si/Ga ratios. This work provides Si/Ga ratios to obtain various carrier concentrations of the freestanding GaN by HVPE, and proposes micro-Raman spectroscopy as a sensitive technique for carrier concentration measurement.",

keywords = "A1. Doping, A3. Hydride vapor phase epitaxy, B1. GaN",

author = "Park, {Hyun Jong} and Kim, {Hong Yeol} and {Young Bae}, Jun and Seonghwan Shin and Jihyun Kim",

note = "Funding Information: The research at Korea University was supported by Future-based Technology Development Program (Nano Fields) ( 2011-0029328 ) and Basic Science Research Program ( 2009-0088551 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology and a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy, Republic of Korea (no. 20104010100640 ).",

year = "2012",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2011.12.029",

language = "English",

volume = "350",

pages = "85--88",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy

AU - Park, Hyun Jong

AU - Kim, Hong Yeol

AU - Young Bae, Jun

AU - Shin, Seonghwan

AU - Kim, Jihyun

N1 - Funding Information: The research at Korea University was supported by Future-based Technology Development Program (Nano Fields) ( 2011-0029328 ) and Basic Science Research Program ( 2009-0088551 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology and a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy, Republic of Korea (no. 20104010100640 ).

PY - 2012/7/1

Y1 - 2012/7/1

N2 - Freestanding GaN was grown on sapphire substrate in a horizontal HVPE system, followed by laser lift-off process. The thickness of the freestanding GaN samples was about 350 μm. Si was used as an n-type dopant and the carrier concentrations were non-destructively measured by micro-Raman spectroscopy. The carrier concentrations of GaN samples were changed from 0.62 to 3.7×10 18/cm 3 by varying the Si/Ga ratios from 0.01 to 0.04. Crystalline quality of the freestanding GaN was characterized by X-ray diffraction (XRD). The full-width at half-maximum (FWHM) values of the rocking curves of the (102) plane was changed from 96.9 to 317.5 arcsec depending on Si/Ga ratios. This work provides Si/Ga ratios to obtain various carrier concentrations of the freestanding GaN by HVPE, and proposes micro-Raman spectroscopy as a sensitive technique for carrier concentration measurement.

AB - Freestanding GaN was grown on sapphire substrate in a horizontal HVPE system, followed by laser lift-off process. The thickness of the freestanding GaN samples was about 350 μm. Si was used as an n-type dopant and the carrier concentrations were non-destructively measured by micro-Raman spectroscopy. The carrier concentrations of GaN samples were changed from 0.62 to 3.7×10 18/cm 3 by varying the Si/Ga ratios from 0.01 to 0.04. Crystalline quality of the freestanding GaN was characterized by X-ray diffraction (XRD). The full-width at half-maximum (FWHM) values of the rocking curves of the (102) plane was changed from 96.9 to 317.5 arcsec depending on Si/Ga ratios. This work provides Si/Ga ratios to obtain various carrier concentrations of the freestanding GaN by HVPE, and proposes micro-Raman spectroscopy as a sensitive technique for carrier concentration measurement.

KW - A1. Doping

KW - A3. Hydride vapor phase epitaxy

KW - B1. GaN

UR - http://www.scopus.com/inward/record.url?scp=84861607857&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2011.12.029

DO - 10.1016/j.jcrysgro.2011.12.029

M3 - Article

AN - SCOPUS:84861607857

SN - 0022-0248

VL - 350

SP - 85

EP - 88

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this