Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy

Keyphrases

• Free Carrier Concentration 100%
• Si-doped 100%
• Hydride Vapor Phase Epitaxy 100%
• Free-standing GaN 100%
• Carrier Concentration 80%
• Ga Ratio 60%
• Micro-Raman Spectroscopy 40%
• X Ray Diffraction 20%
• Rocking Curve 20%
• Concentration of Measure 20%
• Crystal Quality 20%
• Laser Lift-off 20%
• Sapphire Substrate 20%
• Cm(III) 20%
• Full Width at Half Maximum 20%
• N-type Dopant 20%

Engineering

• Carrier Concentration 100%
• Ray Diffraction 20%
• Dopants 20%
• Sapphire Substrate 20%
• Crystalline Quality 20%

Chemical Engineering

• Vapor Phase Epitaxy 100%