Control of the initial growth in atomic layer deposition of Pt films by surface pretreatment

Jung Joon Pyeon; Cheol Jin Cho; Seung Hyub Baek; Chong Yun Kang; Jin Sang Kim; Doo Seok Jeong; Seong Keun Kim

doi:10.1088/0957-4484/26/30/304003

Control of the initial growth in atomic layer deposition of Pt films by surface pretreatment

Jung Joon Pyeon, Cheol Jin Cho, Seung Hyub Baek, Chong Yun Kang, Jin Sang Kim, Doo Seok Jeong, Seong Keun Kim

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The controllability of the nucleation behavior of Pt in atomic layer deposition (ALD) by surface pretreatments with H₂O, H₂S, and NH₃ was investigated. The H₂O pretreatment on SiO₂ and TiO₂ surfaces had little effect on the nucleation of Pt. The H₂S pretreatment on the SiO₂ and TiO₂ surfaces significantly delayed the nucleation of Pt on them, while the NH₃ pretreatment on the TiO₂ surface led to fluent nucleation of Pt. In particular, a continuous Pt film was successfully formed even at an ultrathin thickness of approximately 2.2 nm by NH₃ pretreatment. This work suggests that the pretreatment with H₂S and NH₃ is an efficient way to control the nucleation of Pt in ALD without the support of any reactive species, such as plasma or O₃. Such a strategy enables the easy control of the size and distribution density of Pt nanoparticles for a wide range of applications.

Original language	English
Article number	304003
Journal	Nanotechnology
Volume	26
Issue number	30
DOIs	https://doi.org/10.1088/0957-4484/26/30/304003
Publication status	Published - 2015 Jul 31

Bibliographical note

Publisher Copyright:
© 2015 IOP Publishing Ltd.

Keywords

Pt
atomic layer deposition
initial growth
nucleation behavior
surface pretreatment

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/26/30/304003

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title = "Control of the initial growth in atomic layer deposition of Pt films by surface pretreatment",

abstract = "The controllability of the nucleation behavior of Pt in atomic layer deposition (ALD) by surface pretreatments with H2O, H2S, and NH3 was investigated. The H2O pretreatment on SiO2 and TiO2 surfaces had little effect on the nucleation of Pt. The H2S pretreatment on the SiO2 and TiO2 surfaces significantly delayed the nucleation of Pt on them, while the NH3 pretreatment on the TiO2 surface led to fluent nucleation of Pt. In particular, a continuous Pt film was successfully formed even at an ultrathin thickness of approximately 2.2 nm by NH3 pretreatment. This work suggests that the pretreatment with H2S and NH3 is an efficient way to control the nucleation of Pt in ALD without the support of any reactive species, such as plasma or O3. Such a strategy enables the easy control of the size and distribution density of Pt nanoparticles for a wide range of applications.",

keywords = "Pt, atomic layer deposition, initial growth, nucleation behavior, surface pretreatment",

author = "Pyeon, {Jung Joon} and Cho, {Cheol Jin} and Baek, {Seung Hyub} and Kang, {Chong Yun} and Kim, {Jin Sang} and Jeong, {Doo Seok} and Kim, {Seong Keun}",

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doi = "10.1088/0957-4484/26/30/304003",

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T1 - Control of the initial growth in atomic layer deposition of Pt films by surface pretreatment

AU - Pyeon, Jung Joon

AU - Cho, Cheol Jin

AU - Baek, Seung Hyub

AU - Kang, Chong Yun

AU - Kim, Jin Sang

AU - Jeong, Doo Seok

AU - Kim, Seong Keun

PY - 2015/7/31

Y1 - 2015/7/31

N2 - The controllability of the nucleation behavior of Pt in atomic layer deposition (ALD) by surface pretreatments with H2O, H2S, and NH3 was investigated. The H2O pretreatment on SiO2 and TiO2 surfaces had little effect on the nucleation of Pt. The H2S pretreatment on the SiO2 and TiO2 surfaces significantly delayed the nucleation of Pt on them, while the NH3 pretreatment on the TiO2 surface led to fluent nucleation of Pt. In particular, a continuous Pt film was successfully formed even at an ultrathin thickness of approximately 2.2 nm by NH3 pretreatment. This work suggests that the pretreatment with H2S and NH3 is an efficient way to control the nucleation of Pt in ALD without the support of any reactive species, such as plasma or O3. Such a strategy enables the easy control of the size and distribution density of Pt nanoparticles for a wide range of applications.

AB - The controllability of the nucleation behavior of Pt in atomic layer deposition (ALD) by surface pretreatments with H2O, H2S, and NH3 was investigated. The H2O pretreatment on SiO2 and TiO2 surfaces had little effect on the nucleation of Pt. The H2S pretreatment on the SiO2 and TiO2 surfaces significantly delayed the nucleation of Pt on them, while the NH3 pretreatment on the TiO2 surface led to fluent nucleation of Pt. In particular, a continuous Pt film was successfully formed even at an ultrathin thickness of approximately 2.2 nm by NH3 pretreatment. This work suggests that the pretreatment with H2S and NH3 is an efficient way to control the nucleation of Pt in ALD without the support of any reactive species, such as plasma or O3. Such a strategy enables the easy control of the size and distribution density of Pt nanoparticles for a wide range of applications.

KW - Pt

KW - atomic layer deposition

KW - initial growth

KW - nucleation behavior

KW - surface pretreatment

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DO - 10.1088/0957-4484/26/30/304003

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SN - 0957-4484

VL - 26

JO - Nanotechnology

JF - Nanotechnology

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ER -

Control of the initial growth in atomic layer deposition of Pt films by surface pretreatment

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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