Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire

Kyoungwon Kim; Pulak Chandra Debnath; Dong Hoon Park; Sangsig Kim; Sang Yeol Lee

doi:10.1063/1.3327826

Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire

Kyoungwon Kim^*
, Pulak Chandra Debnath
, Dong Hoon Park
, Sangsig Kim
, Sang Yeol Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Silver doped zinc oxide nanowires (NWs) were synthesized on (0001) sapphire substrate by hot-walled pulsed laser deposition. Both enhancement mode and depletion mode NW field effect transistors (FETs) were fabricated. The shift of threshold voltage of silver doped zinc oxide NW FET was observed from 2.45 to -3.2 V depending on the diameter of NWs without any significant changes of the subthreshold swing, carrier concentration, and on/off ratios. We demonstrate that the transfer characteristics of silver doped zinc oxide NW FETs were closely related with the size of NW diameter and control the shift of threshold voltage.

Original language	English
Article number	083103
Journal	Applied Physics Letters
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.3327826
Publication status	Published - 2010

Bibliographical note

Funding Information:
This work was supported by the Nano-material Technology Development Program (M108KO010021–08K1501–02110) funded by the Center for Nanostructured Materials Technology (CNMT), South Korea, as well as by the System Integrated Semiconductor Base Technology Development Program funded from the Ministry of Knowledge and Economy (MKE), South Korea.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{f513e84da37c45e088906149640546c6,

title = "Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire",

abstract = "Silver doped zinc oxide nanowires (NWs) were synthesized on (0001) sapphire substrate by hot-walled pulsed laser deposition. Both enhancement mode and depletion mode NW field effect transistors (FETs) were fabricated. The shift of threshold voltage of silver doped zinc oxide NW FET was observed from 2.45 to -3.2 V depending on the diameter of NWs without any significant changes of the subthreshold swing, carrier concentration, and on/off ratios. We demonstrate that the transfer characteristics of silver doped zinc oxide NW FETs were closely related with the size of NW diameter and control the shift of threshold voltage.",

author = "Kyoungwon Kim and Debnath, \{Pulak Chandra\} and Park, \{Dong Hoon\} and Sangsig Kim and Lee, \{Sang Yeol\}",

note = "Funding Information: This work was supported by the Nano-material Technology Development Program (M108KO010021–08K1501–02110) funded by the Center for Nanostructured Materials Technology (CNMT), South Korea, as well as by the System Integrated Semiconductor Base Technology Development Program funded from the Ministry of Knowledge and Economy (MKE), South Korea.",

year = "2010",

doi = "10.1063/1.3327826",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire

AU - Kim, Kyoungwon

AU - Debnath, Pulak Chandra

AU - Park, Dong Hoon

AU - Kim, Sangsig

AU - Lee, Sang Yeol

N1 - Funding Information: This work was supported by the Nano-material Technology Development Program (M108KO010021–08K1501–02110) funded by the Center for Nanostructured Materials Technology (CNMT), South Korea, as well as by the System Integrated Semiconductor Base Technology Development Program funded from the Ministry of Knowledge and Economy (MKE), South Korea.

PY - 2010

Y1 - 2010

N2 - Silver doped zinc oxide nanowires (NWs) were synthesized on (0001) sapphire substrate by hot-walled pulsed laser deposition. Both enhancement mode and depletion mode NW field effect transistors (FETs) were fabricated. The shift of threshold voltage of silver doped zinc oxide NW FET was observed from 2.45 to -3.2 V depending on the diameter of NWs without any significant changes of the subthreshold swing, carrier concentration, and on/off ratios. We demonstrate that the transfer characteristics of silver doped zinc oxide NW FETs were closely related with the size of NW diameter and control the shift of threshold voltage.

AB - Silver doped zinc oxide nanowires (NWs) were synthesized on (0001) sapphire substrate by hot-walled pulsed laser deposition. Both enhancement mode and depletion mode NW field effect transistors (FETs) were fabricated. The shift of threshold voltage of silver doped zinc oxide NW FET was observed from 2.45 to -3.2 V depending on the diameter of NWs without any significant changes of the subthreshold swing, carrier concentration, and on/off ratios. We demonstrate that the transfer characteristics of silver doped zinc oxide NW FETs were closely related with the size of NW diameter and control the shift of threshold voltage.

UR - https://www.scopus.com/pages/publications/77749279727

U2 - 10.1063/1.3327826

DO - 10.1063/1.3327826

M3 - Article

AN - SCOPUS:77749279727

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083103

ER -

Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire

Abstract

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