Abstract
We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air.
Original language | English |
---|---|
Pages (from-to) | 117-121 |
Number of pages | 5 |
Journal | Organic Electronics |
Volume | 22 |
DOIs | |
Publication status | Published - 2015 Jul 1 |
Bibliographical note
Funding Information:This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( NRF-2011-0007997 ) and the Human Resources Development program (No. 20144030200580) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry and Energy .
Publisher Copyright:
©2014 Elsevier B.V. All rights reserved.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Chemistry
- Biomaterials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry