This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz.
Bibliographical noteFunding Information:
The research at Korea University was supported by BK21 program. Research at the US Naval Research Lab is partially supported by the Office of Naval Research and Office of Naval Research-Global (Grant Number N62909-09-1-4060 ).
- Electric field
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)