TY - GEN
T1 - Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures
AU - Sari, Emre
AU - Akyuz, Ozgun
AU - Choi, Eun Geun
AU - Lee, In Hwan
AU - Baek, Jong Hyeob
AU - Demir, Hilmi Volkan
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3].
AB - Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3].
UR - http://www.scopus.com/inward/record.url?scp=79951861340&partnerID=8YFLogxK
U2 - 10.1109/PHOTONICS.2010.5698873
DO - 10.1109/PHOTONICS.2010.5698873
M3 - Conference contribution
AN - SCOPUS:79951861340
SN - 9781424453689
T3 - 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
SP - 289
EP - 290
BT - 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
T2 - 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Y2 - 7 November 2010 through 11 November 2010
ER -