Controlled growth of ZnSeTe superlattices with sinusoidal compositional modulation

S. Lee; U. Bindley; J. K. Furdyna; P. M. Reimer; John R. Buschert

doi:10.1116/1.591417

Controlled growth of ZnSeTe superlattices with sinusoidal compositional modulation

S. Lee, U. Bindley, J. K. Furdyna, P. M. Reimer, John R. Buschert

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

ZnSeTe superlattices were molecular beam epitaxially-grown at varying Se and Te concentrations. The MBE process of rotating the substrate in the presence of an inhomogeneous distribution of the anion flux over the substrate was investigated. The process allows to grow massive superlattices of multimicrometer thickness and with hundreds of periods without wearing the shutters.

Original language	English
Pages (from-to)	1518-1521
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.591417
Publication status	Published - 2000 May
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.591417

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abstract = "ZnSeTe superlattices were molecular beam epitaxially-grown at varying Se and Te concentrations. The MBE process of rotating the substrate in the presence of an inhomogeneous distribution of the anion flux over the substrate was investigated. The process allows to grow massive superlattices of multimicrometer thickness and with hundreds of periods without wearing the shutters.",

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AU - Reimer, P. M.

AU - Buschert, John R.

PY - 2000/5

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Controlled growth of ZnSeTe superlattices with sinusoidal compositional modulation

Abstract

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