Controlled synthesis of single-crystalline InN nanorods

Olga Kryliouk; Hyun Jong Park; Yong Sun Won; Tim Anderson; Albert Davydov; Igor Levin; Ji Hyun Kim; Jaime A. Freitas

doi:10.1088/0957-4484/18/13/135606

Controlled synthesis of single-crystalline InN nanorods

Olga Kryliouk, Hyun Jong Park, Yong Sun Won, Tim Anderson, Albert Davydov, Igor Levin, Ji Hyun Kim, Jaime A. Freitas

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Single-crystalline InN nanorods were successfully grown on c-Al ₂O₃, GaN, Si(111), and Si(100) substrates by non-catalytic, template-free hydride metal-organic vapour phase epitaxy (H-MOVPE). It was evaluated thermodynamically and confirmed experimentally that the domain of nanorod growth lies in the vicinity of the growth-etch transition. Stable gas phase oligomer formation is suggested as the nucleation mechanism for InN nanoparticle generation. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent solid-vapour growth mechanism. The nanorod diameter, density, and orientation were controlled by growth temperature, substrate selection, and HCl/TMIn and N/In inlet molar ratios.

Original language	English
Article number	135606
Journal	Nanotechnology
Volume	18
Issue number	13
DOIs	https://doi.org/10.1088/0957-4484/18/13/135606
Publication status	Published - 2007 Apr 4

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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title = "Controlled synthesis of single-crystalline InN nanorods",

abstract = "Single-crystalline InN nanorods were successfully grown on c-Al 2O3, GaN, Si(111), and Si(100) substrates by non-catalytic, template-free hydride metal-organic vapour phase epitaxy (H-MOVPE). It was evaluated thermodynamically and confirmed experimentally that the domain of nanorod growth lies in the vicinity of the growth-etch transition. Stable gas phase oligomer formation is suggested as the nucleation mechanism for InN nanoparticle generation. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent solid-vapour growth mechanism. The nanorod diameter, density, and orientation were controlled by growth temperature, substrate selection, and HCl/TMIn and N/In inlet molar ratios.",

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AU - Kryliouk, Olga

AU - Park, Hyun Jong

AU - Won, Yong Sun

AU - Anderson, Tim

AU - Davydov, Albert

AU - Levin, Igor

AU - Kim, Ji Hyun

AU - Freitas, Jaime A.

PY - 2007/4/4

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N2 - Single-crystalline InN nanorods were successfully grown on c-Al 2O3, GaN, Si(111), and Si(100) substrates by non-catalytic, template-free hydride metal-organic vapour phase epitaxy (H-MOVPE). It was evaluated thermodynamically and confirmed experimentally that the domain of nanorod growth lies in the vicinity of the growth-etch transition. Stable gas phase oligomer formation is suggested as the nucleation mechanism for InN nanoparticle generation. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent solid-vapour growth mechanism. The nanorod diameter, density, and orientation were controlled by growth temperature, substrate selection, and HCl/TMIn and N/In inlet molar ratios.

AB - Single-crystalline InN nanorods were successfully grown on c-Al 2O3, GaN, Si(111), and Si(100) substrates by non-catalytic, template-free hydride metal-organic vapour phase epitaxy (H-MOVPE). It was evaluated thermodynamically and confirmed experimentally that the domain of nanorod growth lies in the vicinity of the growth-etch transition. Stable gas phase oligomer formation is suggested as the nucleation mechanism for InN nanoparticle generation. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent solid-vapour growth mechanism. The nanorod diameter, density, and orientation were controlled by growth temperature, substrate selection, and HCl/TMIn and N/In inlet molar ratios.

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Controlled synthesis of single-crystalline InN nanorods

Abstract

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