Controlling interface oxygen for forming Ag ohmic contact to semi-polar (11-22) plane p-type GaN

Jae Seong Park, Jaecheon Han, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

Original languageEnglish
Pages (from-to)962-967
Number of pages6
JournalSuperlattices and Microstructures
Publication statusPublished - 2014 Oct 16

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program , 10041878 , development of WPE 75% LED device process and standard evaluation technology funded by the MKE, Korea.

Publisher Copyright:
© 2014 Elsevier Ltd. All rights reserved.

Copyright 2020 Elsevier B.V., All rights reserved.


  • Light-emitting diode
  • Ohmic contact
  • Semi-polar GaN
  • Zn/Ag

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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