TY - JOUR
T1 - Controlling the threshold voltage of β-Ga2O3 field-effect transistors
T2 - Via remote fluorine plasma treatment
AU - Kim, Janghyuk
AU - Tadjer, Marko J.
AU - Mastro, Michael A.
AU - Kim, Jihyun
N1 - Funding Information:
Research at the U.S. Naval Research Laboratory was supported by the Office of Naval Research. The research at Korea University was supported by the Technology Development Program to Solve Climate Changes of the National Research Foundation funded by the Ministry of Science and ICT (2017M1A2A2087351) and the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Korea (No. 20172010104830).
Publisher Copyright:
© 2019 The Royal Society of Chemistry.
PY - 2019
Y1 - 2019
N2 - β-phase gallium oxide (β-Ga2O3), emerging as an ultra-wide bandgap semiconductor, suffers from negative threshold voltage (Vth) characteristics, which only allow depletion-mode (D-mode) operation; however, enhancement-mode (E-mode) operation is preferred to ensure fail-safe operation and simplify circuit topologies. Therefore, in this study, the Vth is controlled via remote fluorine plasma treatment in β-Ga2O3 metal-insulator-semiconductor field-effect transistors (MISFETs). Under the top-gate modulation, the Vth of the fluorinated β-Ga2O3 MISFET was positively shifted by +4 V, exhibiting a high on/off ratio (∼107) and low sub-threshold swing (175 mV dec-1). Under the double-gate modulation, the E-mode β-Ga2O3 MISFET was demonstrated, where the Vth was estimated to be +2.2 V. The obtained results suggest that the fluorine plasma treatment is an effective method to control the Vth of the β-Ga2O3 FETs from D-mode to E-mode, pointing out monolithic integration of β-Ga2O3 transistors for future smart power electronics.
AB - β-phase gallium oxide (β-Ga2O3), emerging as an ultra-wide bandgap semiconductor, suffers from negative threshold voltage (Vth) characteristics, which only allow depletion-mode (D-mode) operation; however, enhancement-mode (E-mode) operation is preferred to ensure fail-safe operation and simplify circuit topologies. Therefore, in this study, the Vth is controlled via remote fluorine plasma treatment in β-Ga2O3 metal-insulator-semiconductor field-effect transistors (MISFETs). Under the top-gate modulation, the Vth of the fluorinated β-Ga2O3 MISFET was positively shifted by +4 V, exhibiting a high on/off ratio (∼107) and low sub-threshold swing (175 mV dec-1). Under the double-gate modulation, the E-mode β-Ga2O3 MISFET was demonstrated, where the Vth was estimated to be +2.2 V. The obtained results suggest that the fluorine plasma treatment is an effective method to control the Vth of the β-Ga2O3 FETs from D-mode to E-mode, pointing out monolithic integration of β-Ga2O3 transistors for future smart power electronics.
UR - http://www.scopus.com/inward/record.url?scp=85069767984&partnerID=8YFLogxK
U2 - 10.1039/c9tc02468a
DO - 10.1039/c9tc02468a
M3 - Article
AN - SCOPUS:85069767984
SN - 2050-7526
VL - 7
SP - 8855
EP - 8860
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 29
ER -