Copper metallization for crystalline Si solar cells

Jae Sung You, Jinmo Kang, Donghwan Kim, James Jungho Pak, Choon Sik Kang

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


Cu metallization for crystalline Si solar cells was investigated using either Ti or Ti/TiN diffusion barriers. The resistivity and the specific contact resistance change were measured for both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu(100 nm) contact structures under various annealing conditions. As the annealing temperature increased, the efficiency of the cells increased mainly due to the increase in fill-factor and ISC, which was correlated with the series resistance (RS) of the metal layer. The solar cells with Ti/TiN/Cu contacts generally showed the higher efficiencies than those with Ti/Cu, because in Ti/Cu contacts Cu diffused through Ti and increased RS.

Original languageEnglish
Pages (from-to)339-345
Number of pages7
JournalSolar Energy Materials and Solar Cells
Issue number3
Publication statusPublished - 2003 Sept 15

Bibliographical note

Funding Information:
This work was supported by Grant No. 01-006 from KEPCO of the Electrical Engineering & Science Research Institute.


  • Cu metallization
  • Diffusion barrier
  • Si solar cells
  • Ti
  • TiN

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films


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