Copper metallization for crystalline Si solar cells

Jae Sung You; Jinmo Kang; Donghwan Kim; James Jungho Pak; Choon Sik Kang

doi:10.1016/S0927-0248(02)00470-1

Copper metallization for crystalline Si solar cells

Jae Sung You, Jinmo Kang, Donghwan Kim, James Jungho Pak, Choon Sik Kang

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Cu metallization for crystalline Si solar cells was investigated using either Ti or Ti/TiN diffusion barriers. The resistivity and the specific contact resistance change were measured for both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu(100 nm) contact structures under various annealing conditions. As the annealing temperature increased, the efficiency of the cells increased mainly due to the increase in fill-factor and I_SC, which was correlated with the series resistance (R_S) of the metal layer. The solar cells with Ti/TiN/Cu contacts generally showed the higher efficiencies than those with Ti/Cu, because in Ti/Cu contacts Cu diffused through Ti and increased R_S.

Original language	English
Pages (from-to)	339-345
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	79
Issue number	3
DOIs	https://doi.org/10.1016/S0927-0248(02)00470-1
Publication status	Published - 2003 Sept 15

Keywords

Cu metallization
Diffusion barrier
Si solar cells
Ti
TiN

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/S0927-0248(02)00470-1

Cite this

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title = "Copper metallization for crystalline Si solar cells",

abstract = "Cu metallization for crystalline Si solar cells was investigated using either Ti or Ti/TiN diffusion barriers. The resistivity and the specific contact resistance change were measured for both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu(100 nm) contact structures under various annealing conditions. As the annealing temperature increased, the efficiency of the cells increased mainly due to the increase in fill-factor and ISC, which was correlated with the series resistance (RS) of the metal layer. The solar cells with Ti/TiN/Cu contacts generally showed the higher efficiencies than those with Ti/Cu, because in Ti/Cu contacts Cu diffused through Ti and increased RS.",

keywords = "Cu metallization, Diffusion barrier, Si solar cells, Ti, TiN",

author = "You, {Jae Sung} and Jinmo Kang and Donghwan Kim and Pak, {James Jungho} and Kang, {Choon Sik}",

note = "Funding Information: This work was supported by Grant No. 01-006 from KEPCO of the Electrical Engineering & Science Research Institute. ",

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doi = "10.1016/S0927-0248(02)00470-1",

language = "English",

volume = "79",

pages = "339--345",

journal = "Solar Energy Materials and Solar Cells",

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TY - JOUR

T1 - Copper metallization for crystalline Si solar cells

AU - You, Jae Sung

AU - Kang, Jinmo

AU - Kim, Donghwan

AU - Pak, James Jungho

AU - Kang, Choon Sik

N1 - Funding Information: This work was supported by Grant No. 01-006 from KEPCO of the Electrical Engineering & Science Research Institute.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - Cu metallization for crystalline Si solar cells was investigated using either Ti or Ti/TiN diffusion barriers. The resistivity and the specific contact resistance change were measured for both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu(100 nm) contact structures under various annealing conditions. As the annealing temperature increased, the efficiency of the cells increased mainly due to the increase in fill-factor and ISC, which was correlated with the series resistance (RS) of the metal layer. The solar cells with Ti/TiN/Cu contacts generally showed the higher efficiencies than those with Ti/Cu, because in Ti/Cu contacts Cu diffused through Ti and increased RS.

AB - Cu metallization for crystalline Si solar cells was investigated using either Ti or Ti/TiN diffusion barriers. The resistivity and the specific contact resistance change were measured for both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu(100 nm) contact structures under various annealing conditions. As the annealing temperature increased, the efficiency of the cells increased mainly due to the increase in fill-factor and ISC, which was correlated with the series resistance (RS) of the metal layer. The solar cells with Ti/TiN/Cu contacts generally showed the higher efficiencies than those with Ti/Cu, because in Ti/Cu contacts Cu diffused through Ti and increased RS.

KW - Cu metallization

KW - Diffusion barrier

KW - Si solar cells

KW - Ti

KW - TiN

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U2 - 10.1016/S0927-0248(02)00470-1

DO - 10.1016/S0927-0248(02)00470-1

M3 - Article

AN - SCOPUS:0042011453

SN - 0927-0248

VL - 79

SP - 339

EP - 345

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 3

ER -

Copper metallization for crystalline Si solar cells

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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