Copper-phthalocyanine based organic thin film transistor

T. H. Kwak; H. S. Kang; K. Kim; M. Y. Cho; J. W. Lee; J. Joo

doi:10.1109/NMDC.2006.4388937

Copper-phthalocyanine based organic thin film transistor

T. H. Kwak, H. S. Kang, K. Kim, M. Y. Cho, J. W. Lee, J. Joo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO ₂ layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22×l0^-3 cm²/Vs and -40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	630-631
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388937
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

Keywords

Carrier mobility
Copperphthalocyanine
Organic thin film transistor

ASJC Scopus subject areas

Electrical and Electronic Engineering
Materials Science(all)

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10.1109/NMDC.2006.4388937

Cite this

Kwak, TH, Kang, HS, Kim, K, Cho, MY, Lee, JW & Joo, J 2006, Copper-phthalocyanine based organic thin film transistor. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388937, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 630-631, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388937

@inproceedings{a53399773fe14578844248e3425628f9,

title = "Copper-phthalocyanine based organic thin film transistor",

abstract = "Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO 2 layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22×l0-3 cm2/Vs and -40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.",

keywords = "Carrier mobility, Copperphthalocyanine, Organic thin film transistor",

author = "Kwak, {T. H.} and Kang, {H. S.} and K. Kim and Cho, {M. Y.} and Lee, {J. W.} and J. Joo",

year = "2006",

doi = "10.1109/NMDC.2006.4388937",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "630--631",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

TY - GEN

T1 - Copper-phthalocyanine based organic thin film transistor

AU - Kwak, T. H.

AU - Kang, H. S.

AU - Kim, K.

AU - Cho, M. Y.

AU - Lee, J. W.

AU - Joo, J.

PY - 2006

Y1 - 2006

N2 - Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO 2 layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22×l0-3 cm2/Vs and -40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.

AB - Copper-phthalocyanine based organic thin film transistors (OTFTs) were fabricated. Cu-Pc thin films as an active layer were deposited onto the SiO 2 layer as a gate insulator by using organic molecular beam deposition system. The OTFT devices showed p-type characteristics with field-effect mobility and threshold voltage as 1.22×l0-3 cm2/Vs and -40 V, respectively. The activation energy was estimated to be 0.073 eV, through the temperature dependence of carrier mobility.

KW - Carrier mobility

KW - Copperphthalocyanine

KW - Organic thin film transistor

UR - http://www.scopus.com/inward/record.url?scp=50249144522&partnerID=8YFLogxK

U2 - 10.1109/NMDC.2006.4388937

DO - 10.1109/NMDC.2006.4388937

M3 - Conference contribution

AN - SCOPUS:50249144522

SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 630

EP - 631

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -

Copper-phthalocyanine based organic thin film transistor

Abstract

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Keywords

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