Corner hole adatom stacking fault structure of Bi on Au(1 1 1)

Jeong Heum Jeon; Kyung Hoon Chung; Howon Kim; Se Jong Kahng

doi:10.1016/j.susc.2008.10.036

Corner hole adatom stacking fault structure of Bi on Au(1 1 1)

Jeong Heum Jeon, Kyung Hoon Chung, Howon Kim, Se Jong Kahng

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The surface atomic structure of Bi on Au(1 1 1) is studied with scanning tunneling microscopy. At about 0.5 monolayer of Bi, a well-ordered 6 × 6 atomic structure is observed. The structure has three notable features: corner holes, Bi adatoms, and stacking faults, very similar to a semiconductor surface of Si(1 1 1)-7 × 7. Out of 18 Bi surface atoms in a unit cell, six atoms are at hollow sites and are adatoms, and another six atoms are near-bridge sites. The last six atoms surround corner holes and are lower than other surface atoms by about 0.2 Å. A possible atomic model is proposed based on our observation.

Original language	English
Pages (from-to)	145-150
Number of pages	6
Journal	Surface Science
Volume	603
Issue number	1
DOIs	https://doi.org/10.1016/j.susc.2008.10.036
Publication status	Published - 2009 Jan 1

Bibliographical note

Funding Information:
The authors acknowledge financial support by the Korean Government (KRF-2004-005-C00060, R01-2007-000-11545-0 and M10503000187-05M0300-18710), and from a Korea University grant.

Keywords

Growth
Scanning tunneling microscopy
Surface structure

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.susc.2008.10.036

Cite this

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title = "Corner hole adatom stacking fault structure of Bi on Au(1 1 1)",

abstract = "The surface atomic structure of Bi on Au(1 1 1) is studied with scanning tunneling microscopy. At about 0.5 monolayer of Bi, a well-ordered 6 × 6 atomic structure is observed. The structure has three notable features: corner holes, Bi adatoms, and stacking faults, very similar to a semiconductor surface of Si(1 1 1)-7 × 7. Out of 18 Bi surface atoms in a unit cell, six atoms are at hollow sites and are adatoms, and another six atoms are near-bridge sites. The last six atoms surround corner holes and are lower than other surface atoms by about 0.2 {\AA}. A possible atomic model is proposed based on our observation.",

keywords = "Growth, Scanning tunneling microscopy, Surface structure",

author = "Jeon, {Jeong Heum} and Chung, {Kyung Hoon} and Howon Kim and Kahng, {Se Jong}",

note = "Funding Information: The authors acknowledge financial support by the Korean Government (KRF-2004-005-C00060, R01-2007-000-11545-0 and M10503000187-05M0300-18710), and from a Korea University grant.",

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doi = "10.1016/j.susc.2008.10.036",

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AU - Jeon, Jeong Heum

AU - Chung, Kyung Hoon

AU - Kim, Howon

AU - Kahng, Se Jong

N1 - Funding Information: The authors acknowledge financial support by the Korean Government (KRF-2004-005-C00060, R01-2007-000-11545-0 and M10503000187-05M0300-18710), and from a Korea University grant.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - The surface atomic structure of Bi on Au(1 1 1) is studied with scanning tunneling microscopy. At about 0.5 monolayer of Bi, a well-ordered 6 × 6 atomic structure is observed. The structure has three notable features: corner holes, Bi adatoms, and stacking faults, very similar to a semiconductor surface of Si(1 1 1)-7 × 7. Out of 18 Bi surface atoms in a unit cell, six atoms are at hollow sites and are adatoms, and another six atoms are near-bridge sites. The last six atoms surround corner holes and are lower than other surface atoms by about 0.2 Å. A possible atomic model is proposed based on our observation.

AB - The surface atomic structure of Bi on Au(1 1 1) is studied with scanning tunneling microscopy. At about 0.5 monolayer of Bi, a well-ordered 6 × 6 atomic structure is observed. The structure has three notable features: corner holes, Bi adatoms, and stacking faults, very similar to a semiconductor surface of Si(1 1 1)-7 × 7. Out of 18 Bi surface atoms in a unit cell, six atoms are at hollow sites and are adatoms, and another six atoms are near-bridge sites. The last six atoms surround corner holes and are lower than other surface atoms by about 0.2 Å. A possible atomic model is proposed based on our observation.

KW - Growth

KW - Scanning tunneling microscopy

KW - Surface structure

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DO - 10.1016/j.susc.2008.10.036

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SN - 0039-6028

VL - 603

SP - 145

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JO - Surface Science

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ER -

Corner hole adatom stacking fault structure of Bi on Au(1 1 1)

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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