Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator-semiconductor devices

Woo Chul Lee; Cheol Jin Cho; Jung Hae Choi; Jin Dong Song; Cheol Seong Hwang; Seong Keun Kim

doi:10.1007/s13391-016-6226-7

Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator-semiconductor devices

Woo Chul Lee
, Cheol Jin Cho
, Jung Hae Choi
, Jin Dong Song
, Cheol Seong Hwang
, Seong Keun Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The anomalous frequency dispersion of the accumulation capacitance, i.e. an increase in the accumulation capacitance at high frequencies, of Pt/Al₂O₃/InGaAs metal-oxide-semiconductor (MOS) capacitors was investigated in this study. The anomalous frequency dispersion can be attributed to the considerable effects of parasitic inductance at high frequencies. The effects of parasitic inductance were effectively suppressed by decreasing the capacitor area without changing the MOS structure. This suggests that a smaller capacitor area should be used to precisely characterize the capacitance-voltage behavior of InGaAs-based MOS devices. [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	768-772
Number of pages	5
Journal	Electronic Materials Letters
Volume	12
Issue number	6
DOIs	https://doi.org/10.1007/s13391-016-6226-7
Publication status	Published - 2016 Nov 1
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.

Keywords

frequency-dispersion
InGaAs
MOS capacitors
parasitic inductance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1007/s13391-016-6226-7

Cite this

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title = "Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator-semiconductor devices",

abstract = "The anomalous frequency dispersion of the accumulation capacitance, i.e. an increase in the accumulation capacitance at high frequencies, of Pt/Al2O3/InGaAs metal-oxide-semiconductor (MOS) capacitors was investigated in this study. The anomalous frequency dispersion can be attributed to the considerable effects of parasitic inductance at high frequencies. The effects of parasitic inductance were effectively suppressed by decreasing the capacitor area without changing the MOS structure. This suggests that a smaller capacitor area should be used to precisely characterize the capacitance-voltage behavior of InGaAs-based MOS devices. [Figure not available: see fulltext.]",

keywords = "frequency-dispersion, InGaAs, MOS capacitors, parasitic inductance",

author = "Lee, \{Woo Chul\} and Cho, \{Cheol Jin\} and Choi, \{Jung Hae\} and Song, \{Jin Dong\} and Hwang, \{Cheol Seong\} and Kim, \{Seong Keun\}",

note = "Publisher Copyright: {\textcopyright} 2016, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.",

year = "2016",

month = nov,

day = "1",

doi = "10.1007/s13391-016-6226-7",

language = "English",

volume = "12",

pages = "768--772",

journal = "Electronic Materials Letters",

issn = "1738-8090",

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number = "6",

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TY - JOUR

T1 - Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator-semiconductor devices

AU - Lee, Woo Chul

AU - Cho, Cheol Jin

AU - Choi, Jung Hae

AU - Song, Jin Dong

AU - Hwang, Cheol Seong

AU - Kim, Seong Keun

PY - 2016/11/1

Y1 - 2016/11/1

N2 - The anomalous frequency dispersion of the accumulation capacitance, i.e. an increase in the accumulation capacitance at high frequencies, of Pt/Al2O3/InGaAs metal-oxide-semiconductor (MOS) capacitors was investigated in this study. The anomalous frequency dispersion can be attributed to the considerable effects of parasitic inductance at high frequencies. The effects of parasitic inductance were effectively suppressed by decreasing the capacitor area without changing the MOS structure. This suggests that a smaller capacitor area should be used to precisely characterize the capacitance-voltage behavior of InGaAs-based MOS devices. [Figure not available: see fulltext.]

AB - The anomalous frequency dispersion of the accumulation capacitance, i.e. an increase in the accumulation capacitance at high frequencies, of Pt/Al2O3/InGaAs metal-oxide-semiconductor (MOS) capacitors was investigated in this study. The anomalous frequency dispersion can be attributed to the considerable effects of parasitic inductance at high frequencies. The effects of parasitic inductance were effectively suppressed by decreasing the capacitor area without changing the MOS structure. This suggests that a smaller capacitor area should be used to precisely characterize the capacitance-voltage behavior of InGaAs-based MOS devices. [Figure not available: see fulltext.]

KW - frequency-dispersion

KW - InGaAs

KW - MOS capacitors

KW - parasitic inductance

UR - https://www.scopus.com/pages/publications/84994761113

U2 - 10.1007/s13391-016-6226-7

DO - 10.1007/s13391-016-6226-7

M3 - Article

AN - SCOPUS:84994761113

SN - 1738-8090

VL - 12

SP - 768

EP - 772

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 6

ER -

Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator-semiconductor devices

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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