Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)

Byeong Hyeon Lee; Dae Hwan Kim; Doo Yong Lee; Sungkyun Park; Sangsig Kim; Hyuck In Kwon; Sang Yeol Lee

doi:10.1007/s42341-021-00323-2

Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)

Byeong Hyeon Lee, Dae Hwan Kim, Doo Yong Lee, Sungkyun Park, Sangsig Kim, Hyuck In Kwon, Sang Yeol Lee

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

Unfortunately, the original publication of the article was published without keywords. The keywords are given in this correction.

Original language	English
Pages (from-to)	383
Number of pages	1
Journal	Transactions on Electrical and Electronic Materials
Volume	22
Issue number	3
DOIs	https://doi.org/10.1007/s42341-021-00323-2
Publication status	Published - 2021 Jun

Bibliographical note

Publisher Copyright:
© 2021, The Korean Institute of Electrical and Electronic Material Engineers.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1007/s42341-021-00323-2

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Lee, B. H., Kim, D. H., Lee, D. Y., Park, S., Kim, S., Kwon, H. I., & Lee, S. Y. (2021). Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5). Transactions on Electrical and Electronic Materials, 22(3), 383. https://doi.org/10.1007/s42341-021-00323-2

Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5). / Lee, Byeong Hyeon; Kim, Dae Hwan; Lee, Doo Yong et al.
In: Transactions on Electrical and Electronic Materials, Vol. 22, No. 3, 06.2021, p. 383.

Research output: Contribution to journal › Comment/debate › peer-review

Lee, BH, Kim, DH, Lee, DY, Park, S, Kim, S, Kwon, HI & Lee, SY 2021, 'Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)', Transactions on Electrical and Electronic Materials, vol. 22, no. 3, pp. 383. https://doi.org/10.1007/s42341-021-00323-2

Lee BH, Kim DH, Lee DY, Park S, Kim S, Kwon HI et al. Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5). Transactions on Electrical and Electronic Materials. 2021 Jun;22(3):383. doi: 10.1007/s42341-021-00323-2

Lee, Byeong Hyeon ; Kim, Dae Hwan ; Lee, Doo Yong et al. / Correction to : Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5). In: Transactions on Electrical and Electronic Materials. 2021 ; Vol. 22, No. 3. pp. 383.

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Correction to: Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors (Transactions on Electrical and Electronic Materials, (2021), 22, 2, (133-139), 10.1007/s42341-021-00285-5)

Abstract

Bibliographical note

ASJC Scopus subject areas

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