Correction:Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4Se9(Adv. Mater., (2022), 34, (2204982), 10.1002/adma.202204982)

Gichang Noh, Hwayoung Song, Heenang Choi, Mingyu Kim, Jae Hwan Jeong, Yongjoon Lee, Min Yeong Choi, Saeyoung Oh, Min kyung Jo, Dong Yeon Woo, Yooyeon Jo, Eunpyo Park, Eoram Moon, Tae Soo Kim, Hyun Jun Chai, Woong Huh, Chul Ho Lee, Cheol Joo Kim, Heejun Yang, Seungwoo SongHu Young Jeong, Yong Sung Kim, Gwan Hyoung Lee, Jongsun Lim, Chang Gyoun Kim, Taek Mo Chung, Joon Young Kwak, Kibum Kang

Research output: Contribution to journalComment/debatepeer-review

Abstract

Adv. Mater. 2022, 34, 2204982 DO: 10.1002/adma.202204982 When originally published, the author name Seungwoo Song was spelled incorrectly. This is hereby corrected as shown in author line above; the author line in the online version of the article has also been corrected accordingly.

Original languageEnglish
Article number2300755
JournalAdvanced Materials
Volume35
Issue number13
DOIs
Publication statusPublished - 2023 Mar 29

Bibliographical note

Publisher Copyright:
© 2023 Wiley-VCH GmbH.

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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