Correlation between photoluminescence and Fourier transform infrared spectra in tetra-ethyl-ortho-silicate thin films

Won Chel Choi; Tae Geun Kim; Jin Sang Kim

doi:10.1088/0957-4484/17/4/051

Correlation between photoluminescence and Fourier transform infrared spectra in tetra-ethyl-ortho-silicate thin films

Won Chel Choi, Tae Geun Kim, Jin Sang Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report strong visible photoluminescence (PL) from thermally treated tetra-ethyl-ortho-silicate (TEOS) thin films at room temperature. High-resolution transmission electron microscope (HRTEM) studies showed that the PL originated from nanocrystalline-Si (nc-Si). HRTEM images showed that as-grown TEOS thin films had quasi-static amorphous (QSA) SiO₂ phases instead of the typical amorphous (TA) SiO₂ phases, and that they divided into small pieces of nc-Si after thermal treatment. In addition, Fourier transform infrared (FTIR) investigations showed that the QSA-SiO₂ phases were composed of three types of bonding modes (i.e., Si-O-Si bending, Si-O bending, and Si-O-Si stretching), which play important roles in the formation of the nc-Si at relatively lower annealing temperatures.

Original language	English
Pages (from-to)	1150-1153
Number of pages	4
Journal	Nanotechnology
Volume	17
Issue number	4
DOIs	https://doi.org/10.1088/0957-4484/17/4/051
Publication status	Published - 2006 Feb 28

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/17/4/051

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title = "Correlation between photoluminescence and Fourier transform infrared spectra in tetra-ethyl-ortho-silicate thin films",

abstract = "We report strong visible photoluminescence (PL) from thermally treated tetra-ethyl-ortho-silicate (TEOS) thin films at room temperature. High-resolution transmission electron microscope (HRTEM) studies showed that the PL originated from nanocrystalline-Si (nc-Si). HRTEM images showed that as-grown TEOS thin films had quasi-static amorphous (QSA) SiO2 phases instead of the typical amorphous (TA) SiO2 phases, and that they divided into small pieces of nc-Si after thermal treatment. In addition, Fourier transform infrared (FTIR) investigations showed that the QSA-SiO2 phases were composed of three types of bonding modes (i.e., Si-O-Si bending, Si-O bending, and Si-O-Si stretching), which play important roles in the formation of the nc-Si at relatively lower annealing temperatures.",

author = "Choi, {Won Chel} and Kim, {Tae Geun} and Kim, {Jin Sang}",

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T1 - Correlation between photoluminescence and Fourier transform infrared spectra in tetra-ethyl-ortho-silicate thin films

AU - Choi, Won Chel

AU - Kim, Tae Geun

AU - Kim, Jin Sang

PY - 2006/2/28

Y1 - 2006/2/28

N2 - We report strong visible photoluminescence (PL) from thermally treated tetra-ethyl-ortho-silicate (TEOS) thin films at room temperature. High-resolution transmission electron microscope (HRTEM) studies showed that the PL originated from nanocrystalline-Si (nc-Si). HRTEM images showed that as-grown TEOS thin films had quasi-static amorphous (QSA) SiO2 phases instead of the typical amorphous (TA) SiO2 phases, and that they divided into small pieces of nc-Si after thermal treatment. In addition, Fourier transform infrared (FTIR) investigations showed that the QSA-SiO2 phases were composed of three types of bonding modes (i.e., Si-O-Si bending, Si-O bending, and Si-O-Si stretching), which play important roles in the formation of the nc-Si at relatively lower annealing temperatures.

AB - We report strong visible photoluminescence (PL) from thermally treated tetra-ethyl-ortho-silicate (TEOS) thin films at room temperature. High-resolution transmission electron microscope (HRTEM) studies showed that the PL originated from nanocrystalline-Si (nc-Si). HRTEM images showed that as-grown TEOS thin films had quasi-static amorphous (QSA) SiO2 phases instead of the typical amorphous (TA) SiO2 phases, and that they divided into small pieces of nc-Si after thermal treatment. In addition, Fourier transform infrared (FTIR) investigations showed that the QSA-SiO2 phases were composed of three types of bonding modes (i.e., Si-O-Si bending, Si-O bending, and Si-O-Si stretching), which play important roles in the formation of the nc-Si at relatively lower annealing temperatures.

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Correlation between photoluminescence and Fourier transform infrared spectra in tetra-ethyl-ortho-silicate thin films

Abstract

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