Abstract
Poor crystallinity remains a major problem affecting the availability and cost of CdZnTe (CZT) detectors. Point defects are responsible for small gradual charge loss and correlated with the electron clouds' drift times, which allows electronic correction of the output signals to achieve high spectral-resolution even with large-volume CZT detectors. In contrast, extended defects causes significant charge losses, which typically are uncorrelated, and, thus, result in much greater fluctuations of the output signals that cannot be corrected. Although extended defects do not affect all the interaction events, their fraction rapidly increases with the crystal's thickness and volume. In this paper, we summarize our recent results from testing CZT material and detectors that emphasize the particular roles of two types of extended defects, and their contributions to the device's overall performance.
| Original language | English |
|---|---|
| Article number | 5960003 |
| Pages (from-to) | 1972-1980 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 58 |
| Issue number | 4 PART 2 |
| DOIs | |
| Publication status | Published - 2011 Aug |
Bibliographical note
Funding Information:Manuscript received December 21, 2010; revised March 14, 2011; accepted April 25, 2011. Date of publication July 22, 2011; date of current version August 17, 2011. This work was supported in part by the U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22 and Defense Threat Reduction Agency. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the U.S. Department of Energy.
Keywords
- CdZnTe
- crystal defects
- radiation detectors
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering