Corrigendum to “Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells” [J. Alloy. Compd. 868 (2021) 159211] (Journal of Alloys and Compounds (2021) 868, (S0925838821006198), (10.1016/j.jallcom.2021.159211))

A. Y. Polyakov, L. A. Alexanyan, M. L. Skorikov, A. V. Chernykh, I. V. Shchemerov, V. N. Murashev, Tae Hwan Kim, In Hwan Lee, S. J. Pearton

    Research output: Contribution to journalComment/debatepeer-review

    Abstract

    The authors regret author In-Hwan Lee's affiliation was incorrectly shown in the original version. The authors would like to apologise for any inconvenience caused. https://doi.org/10.1016/j.jallcom.2021.159211.

    Original languageEnglish
    Article number161947
    JournalJournal of Alloys and Compounds
    Volume888
    DOIs
    Publication statusPublished - 2021 Dec 25

    Bibliographical note

    Publisher Copyright:
    © 2021 Elsevier B.V.

    ASJC Scopus subject areas

    • Mechanics of Materials
    • Mechanical Engineering
    • Metals and Alloys
    • Materials Chemistry

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