Corrigendum to “Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells” [J. Alloy. Compd. 868 (2021) 159211] (Journal of Alloys and Compounds (2021) 868, (S0925838821006198), (10.1016/j.jallcom.2021.159211))

A. Y. Polyakov, L. A. Alexanyan, M. L. Skorikov, A. V. Chernykh, I. V. Shchemerov, V. N. Murashev, Tae Hwan Kim, In Hwan Lee, S. J. Pearton

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