Abstract
The gate-controlled nanodevices were fabricated using conventional photolithography and a thin film technique. The Coulomb gap progressively decreases and disappears at a temperature of about 200 K. The measurements show that the behaviors of the Co dots on the straight tungsten-nanowire template are due to junction barriers related to Co islands as in usual single electron tunneling (SET) devices.
Original language | English |
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Pages (from-to) | 3535-3537 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 20 |
DOIs | |
Publication status | Published - 2003 May 19 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)