Coulomb blockade devices of Co dot arrays on tungsten-nanowire templates fabricated by using only a thin film technique

Yun-Hi Lee; Dong Ho Kim; Kyung Sik Shin; Chang Hoon Choi; Yoon Taek Jang; Byeong Kwon Ju

doi:10.1063/1.1571978

Coulomb blockade devices of Co dot arrays on tungsten-nanowire templates fabricated by using only a thin film technique

Yun-Hi Lee, Dong Ho Kim, Kyung Sik Shin, Chang Hoon Choi, Yoon Taek Jang, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The gate-controlled nanodevices were fabricated using conventional photolithography and a thin film technique. The Coulomb gap progressively decreases and disappears at a temperature of about 200 K. The measurements show that the behaviors of the Co dots on the straight tungsten-nanowire template are due to junction barriers related to Co islands as in usual single electron tunneling (SET) devices.

Original language	English
Pages (from-to)	3535-3537
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	20
DOIs	https://doi.org/10.1063/1.1571978
Publication status	Published - 2003 May 19

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1571978

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abstract = "The gate-controlled nanodevices were fabricated using conventional photolithography and a thin film technique. The Coulomb gap progressively decreases and disappears at a temperature of about 200 K. The measurements show that the behaviors of the Co dots on the straight tungsten-nanowire template are due to junction barriers related to Co islands as in usual single electron tunneling (SET) devices.",

author = "Yun-Hi Lee and Kim, {Dong Ho} and Shin, {Kyung Sik} and Choi, {Chang Hoon} and Jang, {Yoon Taek} and Ju, {Byeong Kwon}",

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AU - Lee, Yun-Hi

AU - Kim, Dong Ho

AU - Shin, Kyung Sik

AU - Choi, Chang Hoon

AU - Jang, Yoon Taek

AU - Ju, Byeong Kwon

PY - 2003/5/19

Y1 - 2003/5/19

N2 - The gate-controlled nanodevices were fabricated using conventional photolithography and a thin film technique. The Coulomb gap progressively decreases and disappears at a temperature of about 200 K. The measurements show that the behaviors of the Co dots on the straight tungsten-nanowire template are due to junction barriers related to Co islands as in usual single electron tunneling (SET) devices.

AB - The gate-controlled nanodevices were fabricated using conventional photolithography and a thin film technique. The Coulomb gap progressively decreases and disappears at a temperature of about 200 K. The measurements show that the behaviors of the Co dots on the straight tungsten-nanowire template are due to junction barriers related to Co islands as in usual single electron tunneling (SET) devices.

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U2 - 10.1063/1.1571978

DO - 10.1063/1.1571978

M3 - Article

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JO - Applied Physics Letters

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Coulomb blockade devices of Co dot arrays on tungsten-nanowire templates fabricated by using only a thin film technique

Abstract

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