Through the field induced manipulation of clusters and the systematic analysis of tunneling I-V characteristics on clusters formed on Sb-terminated Si(100) surfaces, it is found that the lateral tunneling between the adjacent clusters is a major conduction mechanism for the appearance of Coulomb staircases in tunneling I-V characteristics. Furthermore, by using the newly devised I-V sweep modes, it is found that Coulomb staircases could also result from the cluster-coated tip. It is also observed that current oscillations give rise to the staircase-like features but should be distinguished from the real Coulomb staircases. These results will be very useful in understanding the tunneling I-V data with a STM facility.
|Number of pages
|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - 2000 Sept
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering