Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces

Kang Ho Park; Jeong Sook Ha; Wan Soo Yun; Mincheol Shin; Young Jo Ko

doi:10.1116/1.1290367

Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces

Kang Ho Park, Jeong Sook Ha, Wan Soo Yun, Mincheol Shin, Young Jo Ko

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Through the field induced manipulation of clusters and the systematic analysis of tunneling I-V characteristics on clusters formed on Sb-terminated Si(100) surfaces, it is found that the lateral tunneling between the adjacent clusters is a major conduction mechanism for the appearance of Coulomb staircases in tunneling I-V characteristics. Furthermore, by using the newly devised I-V sweep modes, it is found that Coulomb staircases could also result from the cluster-coated tip. It is also observed that current oscillations give rise to the staircase-like features but should be distinguished from the real Coulomb staircases. These results will be very useful in understanding the tunneling I-V data with a STM facility.

Original language	English
Pages (from-to)	2365-2370
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	5
DOIs	https://doi.org/10.1116/1.1290367
Publication status	Published - 2000 Sept
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces",

abstract = "Through the field induced manipulation of clusters and the systematic analysis of tunneling I-V characteristics on clusters formed on Sb-terminated Si(100) surfaces, it is found that the lateral tunneling between the adjacent clusters is a major conduction mechanism for the appearance of Coulomb staircases in tunneling I-V characteristics. Furthermore, by using the newly devised I-V sweep modes, it is found that Coulomb staircases could also result from the cluster-coated tip. It is also observed that current oscillations give rise to the staircase-like features but should be distinguished from the real Coulomb staircases. These results will be very useful in understanding the tunneling I-V data with a STM facility.",

author = "Park, \{Kang Ho\} and Ha, \{Jeong Sook\} and Yun, \{Wan Soo\} and Mincheol Shin and Ko, \{Young Jo\}",

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T1 - Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces

AU - Park, Kang Ho

AU - Ha, Jeong Sook

AU - Yun, Wan Soo

AU - Shin, Mincheol

AU - Ko, Young Jo

PY - 2000/9

Y1 - 2000/9

N2 - Through the field induced manipulation of clusters and the systematic analysis of tunneling I-V characteristics on clusters formed on Sb-terminated Si(100) surfaces, it is found that the lateral tunneling between the adjacent clusters is a major conduction mechanism for the appearance of Coulomb staircases in tunneling I-V characteristics. Furthermore, by using the newly devised I-V sweep modes, it is found that Coulomb staircases could also result from the cluster-coated tip. It is also observed that current oscillations give rise to the staircase-like features but should be distinguished from the real Coulomb staircases. These results will be very useful in understanding the tunneling I-V data with a STM facility.

AB - Through the field induced manipulation of clusters and the systematic analysis of tunneling I-V characteristics on clusters formed on Sb-terminated Si(100) surfaces, it is found that the lateral tunneling between the adjacent clusters is a major conduction mechanism for the appearance of Coulomb staircases in tunneling I-V characteristics. Furthermore, by using the newly devised I-V sweep modes, it is found that Coulomb staircases could also result from the cluster-coated tip. It is also observed that current oscillations give rise to the staircase-like features but should be distinguished from the real Coulomb staircases. These results will be very useful in understanding the tunneling I-V data with a STM facility.

UR - https://www.scopus.com/pages/publications/0034266740

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces

Abstract

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