Microscale light-emitting diodes (µLEDs) have ushered in a new era of small-sized high-resolution displays by integrating numerous microscale pixels within a limited panel area. However, to realize passive-matrix-based high-resolution µLED displays, it is important to prevent image diffusion (crosstalk) between the pixels. Herein, p-type resistive-switching (RS) electrodes are introduced in a mesa-etched passive-matrix-based µLED array structure to block electrical interference between adjacent pixels and eliminate cross-talk. To distinguish between addressed and unaddressed pixels in the µLED array structure, the resistance state of the RS electrode is modulated from low (52 Ω) to high (1.2 × 107 Ω). Moreover, the RS electrode exhibits a high on/off ratio (106), good retention (105 s), and stable endurance (104 cycles). X-ray photoelectron spectroscopy analysis reveals that the switching mechanism in the RS electrodes is achieved by the generation and annihilation of oxygen vacancies in the conductive path. Consequently, the fabricated µLEDs with RS electrodes exhibit a 93.1% higher electroluminescence intensity and 95.3% higher light output power compared to a reference device fabricated through combined mesa- and isolation-etching.
Bibliographical noteFunding Information:
J.Y.K. and H.J.L. contributed equally to this work. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (Grant No. 2016R1A3B 1908249).
© 2022 Wiley-VCH GmbH.
- microscale light-emitting diodes
- oxygen vacancy
- passive matrix
- resistive switching
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics