Crystal growth in the low-temperature deposition of polycrystalline silicon thin film

Seung Doh Shin; Dong Wan Kim; Dong Ik Kim; Doh Yeon Kim

doi:10.1016/j.jcrysgro.2004.10.151

Crystal growth in the low-temperature deposition of polycrystalline silicon thin film

Seung Doh Shin, Dong Wan Kim, Dong Ik Kim, Doh Yeon Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this study, the microstructure and property of poly-Si film, deposited using hot wire chemical vapor deposition (HWCVD) were investigated. A consequence of the low a-Si content in the poly-Si film was crystallites with well developed facets. The crystallite morphology was rhombic pyramidal while EBSD analysis revealed the existence of (1 1 1) contact twin planes. The facets of the rhombic pyramidal crystallites were based on {320} and {320}* planes, which have Σ3 twin relationship with respect to (1 1 1) contact twin plane.

Original language	English
Pages (from-to)	347-354
Number of pages	8
Journal	Journal of Crystal Growth
Volume	274
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.10.151
Publication status	Published - 2005 Feb 1
Externally published	Yes

Keywords

A1. EBSD
A1. Rhombic pyramid
A1. Twin
A3. HWCVD
B1. Poly-Si

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.10.151

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abstract = "In this study, the microstructure and property of poly-Si film, deposited using hot wire chemical vapor deposition (HWCVD) were investigated. A consequence of the low a-Si content in the poly-Si film was crystallites with well developed facets. The crystallite morphology was rhombic pyramidal while EBSD analysis revealed the existence of (1 1 1) contact twin planes. The facets of the rhombic pyramidal crystallites were based on {320} and {320}* planes, which have Σ3 twin relationship with respect to (1 1 1) contact twin plane.",

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AU - Shin, Seung Doh

AU - Kim, Dong Wan

AU - Kim, Dong Ik

AU - Kim, Doh Yeon

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N2 - In this study, the microstructure and property of poly-Si film, deposited using hot wire chemical vapor deposition (HWCVD) were investigated. A consequence of the low a-Si content in the poly-Si film was crystallites with well developed facets. The crystallite morphology was rhombic pyramidal while EBSD analysis revealed the existence of (1 1 1) contact twin planes. The facets of the rhombic pyramidal crystallites were based on {320} and {320}* planes, which have Σ3 twin relationship with respect to (1 1 1) contact twin plane.

AB - In this study, the microstructure and property of poly-Si film, deposited using hot wire chemical vapor deposition (HWCVD) were investigated. A consequence of the low a-Si content in the poly-Si film was crystallites with well developed facets. The crystallite morphology was rhombic pyramidal while EBSD analysis revealed the existence of (1 1 1) contact twin planes. The facets of the rhombic pyramidal crystallites were based on {320} and {320}* planes, which have Σ3 twin relationship with respect to (1 1 1) contact twin plane.

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KW - A1. Twin

KW - A3. HWCVD

KW - B1. Poly-Si

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JO - Journal of Crystal Growth

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ER -

Crystal growth in the low-temperature deposition of polycrystalline silicon thin film

Abstract

Keywords

ASJC Scopus subject areas

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