Crystalline Ge quantum dots embedded in SiO2 matrix synthesized by plasma immersion ion implantation

Jun Hong Jeon; Jin Young Choi; Won Woong Park; Sun Woo Moon; Kyoung Won Park; Sang Ho Lim; Seung Hee Han

doi:10.1088/0957-4484/22/28/285605

Crystalline Ge quantum dots embedded in SiO₂ matrix synthesized by plasma immersion ion implantation

Jun Hong Jeon, Jin Young Choi, Won Woong Park, Sun Woo Moon, Kyoung Won Park, Sang Ho Lim, Seung Hee Han

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A new plasma process, i.e.a combination of plasma immersion ion implantation and deposition (PIII&D) and high power impulse magnetron sputtering (HiPIMS), was developed to implant non-gaseous ions into material surfaces. The new process has the great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this study, Ge ions were successfully implanted into SiO₂ thin film, which resulted in uniformly and homogeneously distributed crystalline Ge quantum dots (Ge-QDs) embedded in a SiO₂ matrix even without a further annealing process. Broader areas of application of PIII&D technology are envisaged with this newly developed process.

Original language	English
Article number	285605
Journal	Nanotechnology
Volume	22
Issue number	28
DOIs	https://doi.org/10.1088/0957-4484/22/28/285605
Publication status	Published - 2011 Jul 15

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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abstract = "A new plasma process, i.e.a combination of plasma immersion ion implantation and deposition (PIII&D) and high power impulse magnetron sputtering (HiPIMS), was developed to implant non-gaseous ions into material surfaces. The new process has the great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this study, Ge ions were successfully implanted into SiO2 thin film, which resulted in uniformly and homogeneously distributed crystalline Ge quantum dots (Ge-QDs) embedded in a SiO2 matrix even without a further annealing process. Broader areas of application of PIII&D technology are envisaged with this newly developed process.",

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AU - Jeon, Jun Hong

AU - Choi, Jin Young

AU - Park, Won Woong

AU - Moon, Sun Woo

AU - Park, Kyoung Won

AU - Lim, Sang Ho

AU - Han, Seung Hee

PY - 2011/7/15

Y1 - 2011/7/15

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Crystalline Ge quantum dots embedded in SiO₂ matrix synthesized by plasma immersion ion implantation

Abstract

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