Current-induced flip-flop of magnetization in magnetic tunnel junction with perpendicular magnetic layers and polarization-enhancement layers

Woojin Kim, Taek Dong Lee, Kyung Jin Lee

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    13 Citations (Scopus)

    Abstract

    We performed a micromagnetic investigation of current-induced magnetization switching in perpendicular magnetic tunnel junctions with polarization- enhancement layers. The pinned layer with a polarization-enhancement layer can be excited and eventually reverses at a current density lower than the value theoretically expected from that without a polarization-enhancement layer. The reversal results in continuous flip-flops of magnetizations as long as the current is applied. The flip-flop occurs at only one current polarity, caused by the precession amplification in polarization-enhancement layer. In order to prevent the unwanted flip-flop, the perpendicular anisotropy of the pinned layer must be severalfold larger than that of the free layer.

    Original languageEnglish
    Article number232506
    JournalApplied Physics Letters
    Volume93
    Issue number23
    DOIs
    Publication statusPublished - 2008

    Bibliographical note

    Funding Information:
    W.K. and T.D.L. would like to acknowledge the support from the Tera-level Nanodevices (TND) Frontier Project funded by KISTEP. K.-J.L. would like to acknowledge the support from the KOSEF through the NRL program funded by the Korean Ministry of Education, Science and Technology (Project No. M10600000198-06J0000-19810).

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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