Current-induced flip-flop of magnetization in magnetic tunnel junction with perpendicular magnetic layers and polarization-enhancement layers

Woojin Kim; Taek Dong Lee; Kyung Jin Lee

doi:10.1063/1.3046729

Current-induced flip-flop of magnetization in magnetic tunnel junction with perpendicular magnetic layers and polarization-enhancement layers

Woojin Kim, Taek Dong Lee, Kyung Jin Lee

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We performed a micromagnetic investigation of current-induced magnetization switching in perpendicular magnetic tunnel junctions with polarization- enhancement layers. The pinned layer with a polarization-enhancement layer can be excited and eventually reverses at a current density lower than the value theoretically expected from that without a polarization-enhancement layer. The reversal results in continuous flip-flops of magnetizations as long as the current is applied. The flip-flop occurs at only one current polarity, caused by the precession amplification in polarization-enhancement layer. In order to prevent the unwanted flip-flop, the perpendicular anisotropy of the pinned layer must be severalfold larger than that of the free layer.

Original language	English
Article number	232506
Journal	Applied Physics Letters
Volume	93
Issue number	23
DOIs	https://doi.org/10.1063/1.3046729
Publication status	Published - 2008

Bibliographical note

Funding Information:
W.K. and T.D.L. would like to acknowledge the support from the Tera-level Nanodevices (TND) Frontier Project funded by KISTEP. K.-J.L. would like to acknowledge the support from the KOSEF through the NRL program funded by the Korean Ministry of Education, Science and Technology (Project No. M10600000198-06J0000-19810).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3046729

Cite this

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title = "Current-induced flip-flop of magnetization in magnetic tunnel junction with perpendicular magnetic layers and polarization-enhancement layers",

abstract = "We performed a micromagnetic investigation of current-induced magnetization switching in perpendicular magnetic tunnel junctions with polarization- enhancement layers. The pinned layer with a polarization-enhancement layer can be excited and eventually reverses at a current density lower than the value theoretically expected from that without a polarization-enhancement layer. The reversal results in continuous flip-flops of magnetizations as long as the current is applied. The flip-flop occurs at only one current polarity, caused by the precession amplification in polarization-enhancement layer. In order to prevent the unwanted flip-flop, the perpendicular anisotropy of the pinned layer must be severalfold larger than that of the free layer.",

author = "Woojin Kim and Lee, {Taek Dong} and Lee, {Kyung Jin}",

note = "Funding Information: W.K. and T.D.L. would like to acknowledge the support from the Tera-level Nanodevices (TND) Frontier Project funded by KISTEP. K.-J.L. would like to acknowledge the support from the KOSEF through the NRL program funded by the Korean Ministry of Education, Science and Technology (Project No. M10600000198-06J0000-19810).",

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doi = "10.1063/1.3046729",

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AU - Kim, Woojin

AU - Lee, Taek Dong

AU - Lee, Kyung Jin

N1 - Funding Information: W.K. and T.D.L. would like to acknowledge the support from the Tera-level Nanodevices (TND) Frontier Project funded by KISTEP. K.-J.L. would like to acknowledge the support from the KOSEF through the NRL program funded by the Korean Ministry of Education, Science and Technology (Project No. M10600000198-06J0000-19810).

PY - 2008

Y1 - 2008

N2 - We performed a micromagnetic investigation of current-induced magnetization switching in perpendicular magnetic tunnel junctions with polarization- enhancement layers. The pinned layer with a polarization-enhancement layer can be excited and eventually reverses at a current density lower than the value theoretically expected from that without a polarization-enhancement layer. The reversal results in continuous flip-flops of magnetizations as long as the current is applied. The flip-flop occurs at only one current polarity, caused by the precession amplification in polarization-enhancement layer. In order to prevent the unwanted flip-flop, the perpendicular anisotropy of the pinned layer must be severalfold larger than that of the free layer.

AB - We performed a micromagnetic investigation of current-induced magnetization switching in perpendicular magnetic tunnel junctions with polarization- enhancement layers. The pinned layer with a polarization-enhancement layer can be excited and eventually reverses at a current density lower than the value theoretically expected from that without a polarization-enhancement layer. The reversal results in continuous flip-flops of magnetizations as long as the current is applied. The flip-flop occurs at only one current polarity, caused by the precession amplification in polarization-enhancement layer. In order to prevent the unwanted flip-flop, the perpendicular anisotropy of the pinned layer must be severalfold larger than that of the free layer.

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Current-induced flip-flop of magnetization in magnetic tunnel junction with perpendicular magnetic layers and polarization-enhancement layers

Abstract

Bibliographical note

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