Current-voltage and reverse recovery characteristics of bulk gan p-i-n rectifiers

Y. Irokawa; B. Luo; Jihyun Kim; J. R. LaRoche; F. Ren; K. H. Baik; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi; S. S. Park; Y. J. Park

doi:10.1063/1.1611624

Current-voltage and reverse recovery characteristics of bulk gan p-i-n rectifiers

Y. Irokawa, B. Luo, Jihyun Kim, J. R. LaRoche, F. Ren, K. H. Baik, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, S. S. Park, Y. J. Park

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

A study was performed on current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers. It was found that the forward turn-on voltage displayed a positive temperature coefficient. The improved forward characteristics relative to previous heteroepitaxial p-i-n GaN rectifiers showed the advantages of using a GaN substrate.

Original language	English
Pages (from-to)	2271-2273
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	11
DOIs	https://doi.org/10.1063/1.1611624
Publication status	Published - 2003 Sept 15
Externally published	Yes

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Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Current-voltage and reverse recovery characteristics of bulk gan p-i-n rectifiers",

abstract = "A study was performed on current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers. It was found that the forward turn-on voltage displayed a positive temperature coefficient. The improved forward characteristics relative to previous heteroepitaxial p-i-n GaN rectifiers showed the advantages of using a GaN substrate.",

author = "Y. Irokawa and B. Luo and Jihyun Kim and LaRoche, {J. R.} and F. Ren and Baik, {K. H.} and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.} and Park, {S. S.} and Park, {Y. J.}",

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AU - Irokawa, Y.

AU - Luo, B.

AU - Kim, Jihyun

AU - LaRoche, J. R.

AU - Ren, F.

AU - Baik, K. H.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Park, S. S.

AU - Park, Y. J.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - A study was performed on current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers. It was found that the forward turn-on voltage displayed a positive temperature coefficient. The improved forward characteristics relative to previous heteroepitaxial p-i-n GaN rectifiers showed the advantages of using a GaN substrate.

AB - A study was performed on current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers. It was found that the forward turn-on voltage displayed a positive temperature coefficient. The improved forward characteristics relative to previous heteroepitaxial p-i-n GaN rectifiers showed the advantages of using a GaN substrate.

UR - http://www.scopus.com/inward/record.url?scp=0142089970&partnerID=8YFLogxK

U2 - 10.1063/1.1611624

DO - 10.1063/1.1611624

M3 - Article

AN - SCOPUS:0142089970

SN - 0003-6951

VL - 83

SP - 2271

EP - 2273

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Current-voltage and reverse recovery characteristics of bulk gan p-i-n rectifiers

Abstract

Bibliographical note

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