Current-voltage and reverse recovery characteristics of bulk gan p-i-n rectifiers

Y. Irokawa; B. Luo; Jihyun Kim; J. R. LaRoche; F. Ren; K. H. Baik; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi; S. S. Park; Y. J. Park

doi:10.1063/1.1611624

Current-voltage and reverse recovery characteristics of bulk gan p-i-n rectifiers

Y. Irokawa^*, B. Luo, Jihyun Kim, J. R. LaRoche, F. Ren, K. H. Baik, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi, S. S. Park, Y. J. Park

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

A study was performed on current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers. It was found that the forward turn-on voltage displayed a positive temperature coefficient. The improved forward characteristics relative to previous heteroepitaxial p-i-n GaN rectifiers showed the advantages of using a GaN substrate.

Original language	English
Pages (from-to)	2271-2273
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	11
DOIs	https://doi.org/10.1063/1.1611624
Publication status	Published - 2003 Sept 15
Externally published	Yes

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Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Current-voltage and reverse recovery characteristics of bulk gan p-i-n rectifiers",

abstract = "A study was performed on current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers. It was found that the forward turn-on voltage displayed a positive temperature coefficient. The improved forward characteristics relative to previous heteroepitaxial p-i-n GaN rectifiers showed the advantages of using a GaN substrate.",

author = "Y. Irokawa and B. Luo and Jihyun Kim and LaRoche, \{J. R.\} and F. Ren and Baik, \{K. H.\} and Pearton, \{S. J.\} and Pan, \{C. C.\} and Chen, \{G. T.\} and Chyi, \{J. I.\} and Park, \{S. S.\} and Park, \{Y. J.\}",

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T1 - Current-voltage and reverse recovery characteristics of bulk gan p-i-n rectifiers

AU - Irokawa, Y.

AU - Luo, B.

AU - Kim, Jihyun

AU - LaRoche, J. R.

AU - Ren, F.

AU - Baik, K. H.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Park, S. S.

AU - Park, Y. J.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - A study was performed on current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers. It was found that the forward turn-on voltage displayed a positive temperature coefficient. The improved forward characteristics relative to previous heteroepitaxial p-i-n GaN rectifiers showed the advantages of using a GaN substrate.

AB - A study was performed on current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers. It was found that the forward turn-on voltage displayed a positive temperature coefficient. The improved forward characteristics relative to previous heteroepitaxial p-i-n GaN rectifiers showed the advantages of using a GaN substrate.

UR - https://www.scopus.com/pages/publications/0142089970

U2 - 10.1063/1.1611624

DO - 10.1063/1.1611624

M3 - Article

AN - SCOPUS:0142089970

SN - 0003-6951

VL - 83

SP - 2271

EP - 2273

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Current-voltage and reverse recovery characteristics of bulk gan p-i-n rectifiers

Abstract

Bibliographical note

ASJC Scopus subject areas

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