CW 0.5-W 1.52-μm digital alloy AlGaInAs-InP multiple-quantum-well lasers

Du Chang Heo; Jin Dong Song; Il Ki Han; Jung Il Lee; Ji Chai Jeong; Jong Min Kim; Yong Tak Lee

CW 0.5-W 1.52-μm digital alloy AlGaInAs-InP multiple-quantum-well lasers

Du Chang Heo, Jin Dong Song, Il Ki Han, Jung Il Lee, Ji Chai Jeong, Jong Min Kim, Yong Tak Lee

Research output: Contribution to journal › Article › peer-review

Abstract

AlGaInAs/InGaAs multiple-quantum-well (MQW) 1.52-μm laser diodes are fabricated. The Al-GaInAs barrier is grown by using a digital alloy molecular beam epitaxy technique and is lattice-matched to InP. An internal loss of 13 cm^-1, an internal quantum efficiency of 41 %, and a threshold current density of 0.88 kA/cm² are obtained from broad-area lasers. The characteristic temperature is constant at 70 K up to 50 °C and then decreases to 60 K in the range of 50 - 90 °C. A single-uncoated-facet CW output power as high as 0.5 W is demonstrated, which is the first room-temperature operation of the digital alloy 1.5-μm AlGaInAs material system.

Original language	English
Pages (from-to)	51-54
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	43
Issue number	1
Publication status	Published - 2003 Jul

Keywords

AlGaInAs
Digital Alloy
MQWs

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

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title = "CW 0.5-W 1.52-μm digital alloy AlGaInAs-InP multiple-quantum-well lasers",

abstract = "AlGaInAs/InGaAs multiple-quantum-well (MQW) 1.52-μm laser diodes are fabricated. The Al-GaInAs barrier is grown by using a digital alloy molecular beam epitaxy technique and is lattice-matched to InP. An internal loss of 13 cm-1, an internal quantum efficiency of 41 %, and a threshold current density of 0.88 kA/cm2 are obtained from broad-area lasers. The characteristic temperature is constant at 70 K up to 50 °C and then decreases to 60 K in the range of 50 - 90 °C. A single-uncoated-facet CW output power as high as 0.5 W is demonstrated, which is the first room-temperature operation of the digital alloy 1.5-μm AlGaInAs material system.",

keywords = "AlGaInAs, Digital Alloy, MQWs",

author = "Heo, {Du Chang} and Song, {Jin Dong} and Han, {Il Ki} and Lee, {Jung Il} and Jeong, {Ji Chai} and Kim, {Jong Min} and Lee, {Yong Tak}",

year = "2003",

month = jul,

language = "English",

volume = "43",

pages = "51--54",

journal = "Journal of the Korean Physical Society",

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publisher = "Korean Physical Society",

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TY - JOUR

T1 - CW 0.5-W 1.52-μm digital alloy AlGaInAs-InP multiple-quantum-well lasers

AU - Heo, Du Chang

AU - Song, Jin Dong

AU - Han, Il Ki

AU - Lee, Jung Il

AU - Jeong, Ji Chai

AU - Kim, Jong Min

AU - Lee, Yong Tak

PY - 2003/7

Y1 - 2003/7

N2 - AlGaInAs/InGaAs multiple-quantum-well (MQW) 1.52-μm laser diodes are fabricated. The Al-GaInAs barrier is grown by using a digital alloy molecular beam epitaxy technique and is lattice-matched to InP. An internal loss of 13 cm-1, an internal quantum efficiency of 41 %, and a threshold current density of 0.88 kA/cm2 are obtained from broad-area lasers. The characteristic temperature is constant at 70 K up to 50 °C and then decreases to 60 K in the range of 50 - 90 °C. A single-uncoated-facet CW output power as high as 0.5 W is demonstrated, which is the first room-temperature operation of the digital alloy 1.5-μm AlGaInAs material system.

AB - AlGaInAs/InGaAs multiple-quantum-well (MQW) 1.52-μm laser diodes are fabricated. The Al-GaInAs barrier is grown by using a digital alloy molecular beam epitaxy technique and is lattice-matched to InP. An internal loss of 13 cm-1, an internal quantum efficiency of 41 %, and a threshold current density of 0.88 kA/cm2 are obtained from broad-area lasers. The characteristic temperature is constant at 70 K up to 50 °C and then decreases to 60 K in the range of 50 - 90 °C. A single-uncoated-facet CW output power as high as 0.5 W is demonstrated, which is the first room-temperature operation of the digital alloy 1.5-μm AlGaInAs material system.

KW - AlGaInAs

KW - Digital Alloy

KW - MQWs

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M3 - Article

AN - SCOPUS:0043071481

SN - 0374-4884

VL - 43

SP - 51

EP - 54

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

CW 0.5-W 1.52-μm digital alloy AlGaInAs-InP multiple-quantum-well lasers

Abstract

Keywords

ASJC Scopus subject areas

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